Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition Dapeng XuHui YangR. H. Wu Regular Issue Paper Pages: 177 - 182
Effects of surface porosity on tungsten trioxide(WO3) films’ electrochromic performance W. J. LeeY. K. FangFang C. Ho Regular Issue Paper Pages: 183 - 187
Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers I. -H. TanD. A. VanderwaterT. D. Ostentowski Regular Issue Paper Pages: 188 - 194
Etching behavior of GaAs/AlGaAs multilayer structure during laser beam scanning Se-Ki ParkCheon LeeEun Kyu Kim Regular Issue Paper Pages: 195 - 198
The removal of deformed submicron particles from silicon wafers by spin rinse and megasonics Fan ZhangAhmed A. BusnainaShi-Qing Wang Regular Issue Paper Pages: 199 - 204
Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE F. BrunnerE. RichterM. Weyers Regular Issue Paper Pages: 205 - 209
Phosphorus implantation into 4H-silicon carbide M. A. CapanoR. SanthakumarJ. A. Cooper Jr. Regular Issue Paper Pages: 210 - 214
Electrical properties of InAlAs/InAsxP1-x/InP composite-channel modulation-doped structures grown by solid source molecular beam epitaxy Tong-Ho KimApril S. BrownRobert A. Metzger Regular Issue Paper Pages: 215 - 221
Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications R. F. KopfR. A. HammJ. Thevin Regular Issue Paper Pages: 222 - 224
Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures Charles R. LutzJason KanaleyKei May Lau Regular Issue Paper Pages: 225 - 230
High-temperature hysteretic electronic effects of (AlxGa1−x)0.5In0.5P (x>0.65) B. BiegJ. G. CederbergT. F. Kuech Regular Issue Paper Pages: 231 - 236
The adhesion strength of A lead-free solder hot-dipped on copper substrate Shan-Pu YuMin-Hsiung HonMoo-Chin Wang Regular Issue Paper Pages: 237 - 243