Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN F. K. KoschnickK. MichaelE. Munoz Regular Issue Paper Pages: 1351 - 1355
Fracture of Sn-3.5%Ag solder alloy under creep V. I. IgoshevJ. I. KleimanU. Michon Regular Issue Paper Pages: 1356 - 1361
Temperature dependence of the photoluminescence properties and band gap energy of InxGa1−xAs/GaAs quantum wells J.R BothaA. W. R. Leitch Regular Issue Paper Pages: 1362 - 1371
Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures Y. Q. WangZ. L. WangG. May Regular Issue Paper Pages: 1372 - 1379
Optical transmission losses in polycrystalline silicon strip waveguides: Effects of waveguide dimensions, thermal treatment, hydrogen passivation, and wavelength Ling LiaoDesmond R. LimLionel C. Kimerling Regular Issue Paper Pages: 1380 - 1386
Molecular beam epitaxial growth of BGaAs ternary compounds V. K. GuptaM. W. KochG. W. Wicks Regular Issue Paper Pages: 1387 - 1391
Numerical prediction of mechanical properties of Pb-Sn solder alloys containing antimony, bismuth and or silver ternary trace elements Shiva P. GadagSusant Patra Regular Issue Paper Pages: 1392 - 1397
Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N2 ambient D. KeiperR. WestphalenG. Landgren Regular Issue Paper Pages: 1398 - 1401
Control of the critical supercooling in LPE A. Yu. GorbatchevV. A. MishurnyiF. de Anda Regular Issue Paper Pages: 1402 - 1405
Effect of UV-ozone oxidation on the device characteristics of InP-based heterostructure bipolar transistors R. DriadW. R. McKinnonS. P. McAlister Letter Pages: L33 - L36