1. Solid source MBE growth of InAsP/InP quantum wells

   • Georgiana Dagnall
   • Jeng-Jung Shen
   • Stuart R. Stock

   Regular Issue Paper Pages: 933 - 938

2. The ohmic contact formation mechanism of Au/Pt/Pd ohmic contact to p-ZnTe

   • Dae-Woo Kim
   • Hee-Soo Park
   • Sung-Man Lee

   Regular Issue Paper Pages: 939 - 943

3. Lateral diffusion effects in AuGe based source-drain contacts to AllnAs/InGaAs/InP doped channel MODFETs

   • A. A. Iliadis
   • J. K. Zahurak
   • W. T. Masselink

   Regular Issue Paper Pages: 944 - 948

4. Reaction of aluminum-on-titanium bilayer with GaN: Influence of the Al:Ti atomic ratio

   • S. M. Gasser
   • E. Kolawa
   • M. -A. Nicolet

   Regular Issue Paper Pages: 949 - 954

5. The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlattices

   • M. L. Seaford
   • J. S. Solomon
   • K. G. Eyink

   Regular Issue Paper Pages: 955 - 958

6. Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases

   • V. A. Mishurnyi
   • F. De Anda
   • V. I. Vasil’ev

   Regular Issue Paper Pages: 959 - 962

7. Pyrolysis of 1,1 dimethylhydrazine for OMVPE growth

   • R. T. Lee
   • G. B. Stringfellow

   Regular Issue Paper Pages: 963 - 969

8. Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor

   • Sun Jung Kim
   • Young Hun Seo
   • Hyung Jae Lee

   Regular Issue Paper Pages: 970 - 974

9. Capacitance-voltage profiling and thermal evolution of the conduction band-offset of unstrained Ga_0.47In_0.53As/InP single quantum well

   • C. Guillot
   • J. Achard
   • M. Dugay

   Regular Issue Paper Pages: 975 - 979

10. AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy

    • P. Savolainen
    • M. Toivonen
    • M. Pessa

    Regular Issue Paper Pages: 980 - 985

11. X-ray photoelectron spectroscopy and electrical properties studies of Nb-doped strontium titanate ceramics prepared from titanyl acylate precursors

    • Wein-Duo Yang

    Regular Issue Paper Pages: 986 - 995

12. Electrical characterization of self-assembled In_0.5Ga_0.5As/GaAs quantum dots by deep level transient spectroscopy

    • Z-Q. Fang
    • Q. H. Xie
    • J. E. Van Nostrand

    Letters Pages: L13 - L16