Transient thermal behavior in a new RTP chamber A. TillmannU. KreiserT. Theilig Special Issue Paper Pages: 1278 - 1285
Controlled thermal kinetics in RTP J. NiessCh. GrunwaldZ. Nényei Special Issue Paper Pages: 1286 - 1290
RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants Steven MarcusWilfried LerchJudy Chow Special Issue Paper Pages: 1291 - 1295
Optimization of RTA parameters to produce ultra-shallow, highly activated B+, BF 2 + , and As+ ion implanted junctions Daniel F. DowneySteven D. MarcusJudy W. Chow Special Issue Paper Pages: 1296 - 1314
Optical effects during rapid thermal diffusion S. NoëlL. VenturaT. Theiler Special Issue Paper Pages: 1315 - 1322
Wafer emissivity independent temperature measurements S. AbedrabboF. M. TongA. T. Fiory Special Issue Paper Pages: 1323 - 1328
Activation annealing of Si-implanted GaN up to 1500°C using a novel RTP technique M. FuV. SarvepalliJ. A. Sekhar Special Issue Paper Pages: 1329 - 1333
Use of the effective heat of formation model to determine phase formation sequences of In-Se, Ga-Se, Cu-Se, and Ga-In multilayer thin films H. J. MooreD. L. OlsonR. Noufi Special Issue Paper Pages: 1334 - 1340
Modeling emissivity of rough and textured silicon wafers Bhushan L. SoporiWei ChenN. M. Ravindra Special Issue Paper Pages: 1341 - 1346
Preparation and characterization of SiO2 films with different techniques Zhang XupingLi QingZhang Haokang Special Issue Paper Pages: 1347 - 1350
Compositional, structural, optical and electrical characterization of CulnTe2 grown by the tellurization of stoichiometric Cu and in in the liquid phase G. MarinS. M. WasimA. E. Mora Special Issue Paper Pages: 1351 - 1357
Improved electrical properties on the anodic oxide/InP interface for MOS structures R. R. SumathiN. DharmarasuJ. Kumar Special Issue Paper Pages: 1358 - 1361
Modeling the atomic transport kinetics in high-lead solders G. GhoshZ. -K. Liu Special Issue Paper Pages: 1362 - 1366
Microstructure changes in Sn-3.5Ag solder alloy during creep V. I. IgoshevJ. I. KleimanM. Wiseman Special Issue Paper Pages: 1367 - 1371
Low resistance, thermally stable Au/Pt/Ti/WSiN ohmic contacts on n+-InGaAs/n-GaAs layer systems E. NebauerM. MaiJ. Würfl Special Issue Paper Pages: 1372 - 1374