Experimental investigations of superconductivity in quasi-two-dimensional epitaxial copper oxide superlattices and trilayers Douglas H. LowndesDavid P. Norton OriginalPaper Pages: 841 - 847
Composition of pulsed-laser-deposited Y-Ba-Cu-0 and Ba-K-Bi-O thin films M. C. FooteR. P. VasquezJ. B. Barner OriginalPaper Pages: 849 - 853
Pulsed laser deposition of carbon films: Dependence of film properties on laser wavelength P. T. MurrayD. T. Peeler OriginalPaper Pages: 855 - 859
Domain epitaxial growth of TiN/Si(001), TiN/GaAs(001), and Si/TiN/Si(001) heterostructures by laser physical vapor deposition: Theory and experiment K. JagannadhamJ. NarayanP. Tiwari OriginalPaper Pages: 861 - 874
Pulsed laser deposition of epitaxial BaxSr1−xTiO3/YBa2Cu3O7 bilayers on LaAIO3 substrates S. D. HarknessC. F. YueR. K. Singh OriginalPaper Pages: 875 - 878
Synthesis and characterization of Pb(Zr0.54Ti0.46)O3 thin films on (100)Si using textured YBa2Cu3O7−δ and yttria-stabilized zirconia buffer layers by laser physical vapor deposition technique P. TiwariT. ZhelevaJ. Narayan OriginalPaper Pages: 879 - 882
Low temperature passivation of Si1−xGex alloys by dry high pressure oxidation C. CaragianisY. ShigesatoD. C. Paine OriginalPaper Pages: 883 - 888
Crystallographic evolution of microstructure in thin film processing: Part I. grain size distribution J. A. TrogoloR. RoyKrishna Rajan OriginalPaper Pages: 889 - 892
Crystallographic evolution of microstructure in thin film processing: Part II. Grain boundary structure Ronald R. PetkieK. N. TuKrishna Rajan OriginalPaper Pages: 893 - 899
Nanocrystalline Ge synthesis by the chemical reduction of hydrothermally grown Si0.6Ge0.4O2 David C. PaineTae Young KimYuzo Shigesato OriginalPaper Pages: 901 - 906
Processing effects on the morphological stability at epitaxial interfaces Ravi M. BhatkalKrishna Rajan OriginalPaper Pages: 907 - 911
Critical issues in thin film microstructure development R. K. SinghK. Rajan OriginalPaper Pages: 913 - 918
Intermetallic embrittlement of thin unsupported tin/copper specimens G. B. FreemanB. R. LivesayE. G. O’Neil OriginalPaper Pages: 919 - 924
Optocoupler made from semiconducting polymers G. YuK. PakbazA. J. Heeger OriginalPaper Pages: 925 - 928
Dislocation-Induced deep level states in In0.08Ga0.92As/GaAs heterostructures A. RaisanenL. J. BrillsonH. Wieder OriginalPaper Pages: 929 - 933
Dopant activation energy and hole effective mass in heavily Zn-Doped InP K. HansenE. PeinerM. Von Ortenberg OriginalPaper Pages: 935 - 941
Capacitance-Voltage characteristics of metal-insulator-semiconductor diodes with S passivation and Si interface control layers on GaAs and InP D. LandheerZ. -H. LuW. M. Lau OriginalPaper Pages: 943 - 952
Ohmic contact formation in palladium-based metallizations to n-Type InP Ping JianDouglas G. IveyGordon Knight OriginalPaper Pages: 953 - 962
Observation of phase separation in Hg1−xCdxTe solid solutions by low incident angle x-ray diffraction Heribert WiedemeierKuo-Tong Chen OriginalPaper Pages: 963 - 968
Growth and characterization of (111)B InGaAs/GaAs multi-quantum well PIN diode structures JPR DavidR. GreyD. J. Mowbray OriginalPaper Pages: 975 - 982
Formation mechanism of InxGa1−xAs ohmic contacts to n-type GaAs prepared by radio frequency sputtering Chihiro J. UchiboriMasayuki OkunishiMasanori Murakami OriginalPaper Pages: 983 - 989
Electrical and structural properties of GeMoW ohmic contact to an In0.5Ga0.5As cap layer on n-Type GaAs K. G. MerkelV. M. BrightS. D. Walck OriginalPaper Pages: 991 - 996