Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator D. FeijóoJ. C. BeanW. C. Liang OriginalPaper Pages: 493 - 496
The Ir/Si/ErSi2 tunable infrared photoemission sensor I. SagnesY. CampidelliP. A. Badoz OriginalPaper Pages: 497 - 501
Energy-Band offsets and electroluminescence in n-InAs1-xSb1-x/N-GaSb heterojunctions grown by liquid phase epitaxy Y. MaoA. Krier OriginalPaper Pages: 503 - 507
Modulated reflectance and absorption characterization of single crystal GaN films A. GiordanaD. K. GaskillA. ESTES Wickenden OriginalPaper Pages: 509 - 512
Two electron transitions of the exciton bound at the Si Donor confined in GaAs/AlxGa1-xAs quantum wells P. O. HoltzB. MonemarA. C. Gossard OriginalPaper Pages: 513 - 518
Defects in molecular beam epitaxial GaAs grown at low temperatures N. HozhabriS. C. SharmaK. Alavt OriginalPaper Pages: 519 - 523
Rheological characterization of solder pastes Romano LapasinVittorio SirtoriDonato Casati OriginalPaper Pages: 525 - 532
The effect of gold-nickel metallization microstructure on fluxless soldering R. B. CinqueJ. W. Morris OriginalPaper Pages: 533 - 539
Active brazing alloy paste as a totally metal thick film conductor material Mingguang ZhuD. D. L. Chung OriginalPaper Pages: 541 - 549
Interactions between ferroelectric BaTiO3 and Si Q. X. JiaL. H. ChangW. A. Anderson OriginalPaper Pages: 551 - 556
Thermally conducting polymer-matrix composites containing both AIN particles and SiC whiskers Lin LiD. D. L. Chung OriginalPaper Pages: 557 - 564
Growth and in situ ellipsometric analysis of Si1-xGex alloys deposited by chemical beam epitaxy P. BoucaudF. GlowackvD. Bensahel OriginalPaper Pages: 565 - 568
Effects of nitrogen doping on the growth and properties of plasma-enhanced chemical-vapor-deposited diamond-like-carbon films G. SreenivasS. S. AngW. D. Brown OriginalPaper Pages: 569 - 575
Molecular beam deposition of low-resistance polycrystalline GaAs K. MochizukiT. NakamuraT. Tanoue OriginalPaper Pages: 577 - 580