Abstract
We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.
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Hozhabri, N., Sharma, S.C., Pathak, R.N. et al. Defects in molecular beam epitaxial GaAs grown at low temperatures. J. Electron. Mater. 23, 519–523 (1994). https://doi.org/10.1007/BF02670654
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DOI: https://doi.org/10.1007/BF02670654