Interface structure between Bi and CdTe in molecular beam epitaxially Grown Bi/CdTe and Bi/Bi1−xSbx superlattices J. ChenA. di VenereJ. B. Ketterson Regular Issue Papers Pages: 1255 - 1259
Thickness-scaling of sputtered PZT films in the 200 nm range for memory applications C. SudhamaJ. KimJ. C. Lee Regular Issue Papers Pages: 1261 - 1268
Metalorganic chemical vapor deposition growth of GaAs:Er using Er(C4H9C5H4)3 Xiao M. FangYabo LiJames S. Solomon Regular Issue Papers Pages: 1269 - 1272
Characteristics of the NO dielectric film with low pressure chemical vapor deposition in-situ nitridation K. H. KimD. H. KoS. T. Ahn Regular Issue Papers Pages: 1273 - 1278
Evaluation of PZT thin films on Ag coated Si substrates Hong-Xue ZhangPentti KarjalainenSeppo Leppävuori Regular Issue Papers Pages: 1279 - 1284
Experimental studies of metal/InP interfaces formed at room temperature and 77K L. HeZ. Q. ShiW. A. Anderson Regular Issue Papers Pages: 1285 - 1289
Interfaces of InAsP/InP multiple quantum wells grown by metalorganic vapor phase epitaxy C. A. TranJ. T. GrahamR. A. Masut Regular Issue Papers Pages: 1291 - 1296
Galvanomagnetic properties of two-dimensional electron gases in strain relaxed InxGa1−xAs(x<0.40) heterostructures grown by molecular beam epitaxy on GaAs substrates Juan M. FernándezJianhui ChenH. H. Wieder Regular Issue Papers Pages: 1297 - 1302
Photoluminescence evaluation of pseudomorphic high electron mobility transistor device waters P. A. MartinJ. M. BallingallT. J. Rogers Regular Issue Papers Pages: 1303 - 1307
Three-dimensional simulation of impurity diffusion in thin-film diffusion barriers Xiang GuiSteven K. DewMichael J. Brett Regular Issue Papers Pages: 1309 - 1314
A new precipitate phase in Al-4wt. % Cu thin-film interconnects W. C. ShihA. L. Greer Regular Issue Papers Pages: 1315 - 1323
Mathematical modeling of alternative pad designs in flip-chip soldering processes Scott E. DeeringJulian Szekely Regular Issue Papers Pages: 1325 - 1334
The interactions between Si/Co films and GaAs(001) substrates J. S. KwakH. K. BaikS. I. Kim Regular Issue Papers Pages: 1335 - 1341
Investigation of DX centers in modulation-doped field-effect transistor-type Al0.3Ga0.7As/GaAs heterostructures using a fourier-transform deep level transient spectroscopy system Y. HaddabM. A. PyM. Ilegems Regular Issue Papers Pages: 1343 - 1347
Precipitation in CdTe crystals studied through mie scattering R. D. S. YadavaB. S. SundersheshuW. N. Borle Regular Issue Papers Pages: 1349 - 1357
Hole scattering mechanisms in Hg1−xCdxTe R. D. S. YadavaA. K. GuptaA. V. R. Warrier Review Section Pages: 1359 - 1378
