Interface strain in organometallic vapor phase epitaxy grown InGaAs/InP superlattices A. R. ClawsonX. JiangT. T. Vu Regular Issue Paper Pages: 155 - 160
Novel carrier confinement (P-N-P junctions) on (111)A GaAs substrates patterned with equilateral triangles K. KobayashiT. TakebeD. Lovell Regular Issue Paper Pages: 161 - 164
Evidence of interaction between two DX centers in N-Type AlGaAs from RDLTS and temperature dependent pulse-width DLTS measurements C. W. WangC. H. WuC. L. Balestra Regular Issue Paper Pages: 165 - 170
Single wafer processing in stagnation point flow CVD reactor: Prospects, constraints and reactor design Prasad N. Gadgil Regular Issue Paper Pages: 171 - 177
Novel fully self-aligned MESFET using source and drain regrown nonalloyed contacts by ALE M. M. HashemiF. E. NajjarS. M. Bedair Regular Issue Paper Pages: 179 - 183
Analysis of the reaction between 60Sn-40Pb solder with a Pd-Pt-Ag-Cu-Au alloy D. R. FrearJ. R. MichaelP. F. Hlava Regular Issue Paper Pages: 185 - 194
Majority and minority carrier traps in monocrystalline CulnSe2 A. L. LiI. Shih Regular Issue Paper Pages: 195 - 199
Lattice mismatched InGaAs on silicon photodetectors grown by molecular beam epitaxy N. A. PapanicolaouG. W. AndersonA. Christou Regular Issue Paper Pages: 201 - 206
Characterization of interface defects in oxygen-implanted silicon films Santos MayoJeremiah R. LowneyPeter Roitman Regular Issue Paper Pages: 207 - 214
Preparation and characterization of thin films of MgO, Al2O3 and MgAl2O4 by atomic layer deposition Ron HuangAdrian H. Kitai Regular Issue Paper Pages: 215 - 220
Schottky barrier modification on InP using shallow implant layer Ritu TyagiT. P. Chow Regular Issue Paper Pages: 221 - 227
Anomalous anisotropy in the absorption coefficient of vacancy-ordered Ga2Se3 Tamotsu OkamotoMakoto KonagaiOsamu Nittono Regular Issue Paper Pages: 229 - 232
Photoluminescence spectroscopy of localized excitons in Si1−xGex L. C. LenchyshynM. L. W. ThewaltD. C. Houghton Regular Issue Paper Pages: 233 - 238
The electron microscopy of post-growth induced defects of ZnSe/GaAs epilayers J. E. YuK. S. Jones Regular Issue Paper Pages: 239 - 245
Structural characterization of low temperature Epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM Zhizhen YeYaping LiuRafael Reif Regular Issue Paper Pages: 247 - 253
Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations C. NguyenB. BrarJ. H. English Regular Issue Paper Pages: 255 - 258