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Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations

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Abstract

Low-temperature mobilities in InAs-AlSb quantum wells depend sensitively on the buffer layer structures. Reflection high energy electron diffraction and x-ray diffraction show that the highest crystalline quality and best InAs transport properties are obtained by a buffer layer sequence GaAs → AlAs → AlSb → GaSb, with a final GaSb layer thickness of at least 1 μm. Using the improved buffer scheme, mobilities exceeding 600,000 cm2/Vs at 10 K are routinely obtained. Modulation δ-doping with tellurium has yielded electron sheet concentrations up to 8 × 1012 cm−2 while maintaining mobilities approaching 100,000 cm2/Vs at low temperatures.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of California, 93106, Santa Barbara, CA

    C. Nguyen, B. Brar, C. R. Bolognesi, J. J. Pekarik, H. Kroemer & J. H. English

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  1. C. Nguyen
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  2. B. Brar
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  3. C. R. Bolognesi
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  4. J. J. Pekarik
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  5. H. Kroemer
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  6. J. H. English
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Nguyen, C., Brar, B., Bolognesi, C.R. et al. Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations. J. Electron. Mater. 22, 255–258 (1993). https://doi.org/10.1007/BF02665035

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  • DOI: https://doi.org/10.1007/BF02665035

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