The influence of indium tin oxide deposition on the transport properties at InP junctions J. K. LuoH. Thomas Regular Issue Paper Pages: 1311 - 1316
Hall and drift mobilities in molecular beam epitaxial grown GaAs V. W. L. ChinT. OsotchanZ. Kachwalla Regular Issue Paper Pages: 1317 - 1321
Low frequency electromigration noise and film microstructure in Al/Si stripes: Electrical measurements and TEM analysis C. CiofiA. DiligentiB. Neri Regular Issue Paper Pages: 1323 - 1326
Processing-texture relationships in dual-unbalanced magnetron deposition of TiN films S. L. RohdeY. K. KimR. J. De Angelis Regular Issue Paper Pages: 1327 - 1330
Microstructural examination of extended crystal defects in silicon selective epitaxial growth H. YenE. P. KvamG. W. Neudeck Regular Issue Paper Pages: 1331 - 1339
Compositional nonuniformities and strain relaxation at misoriented InxGa(1−x)As/GaAs interfaces N. D. ZakharovP. WernerJ. Y. Tsao Regular Issue Paper Pages: 1341 - 1344
Effects of oxygen doping on properties of microcrystalline silicon film grown using rapid thermal chemical vapor deposition X. L. XuV. MisraE. A. Irene Regular Issue Paper Pages: 1345 - 1351
Radiative recombination in modulation-doped GaAs/AlGaAs heterostructures in the presence of an electric field T. LundströmP. O. HoltzA. C. Gossard Regular Issue Paper Pages: 1353 - 1359
Excess dark current due to saw damage in semi-insulating GaAs Z. Q. FangD. C. Look Letters Pages: 1361 - 1363
Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction C. A. WangS. H. GrovesD. R. Calawa Letters Pages: 1365 - 1368
Fast growth of Cd1−xZnxTe single crystals by physical vapor transport H. WiedemeierG. H. Wu Letters Pages: 1369 - 1372