Present status and future of theoretical work on point defects and diffusion in semiconductors C. G. Morgan-Pond OriginalPaper Pages: 399 - 408
Layer intermixing and related long-term instability in heavily carbon-doped AlGaAs/GaAs superlattices I. SzafranekM. SzafranekG. E. Stillman OriginalPaper Pages: 409 - 418
Surface treatment effects on atomic diffusion in Si explained without self interstitials J. A. Van VechtenU. SchmidZhang Q.-S OriginalPaper Pages: 431 - 439
Electrical properties of nickel in silicon H. KitagawaS. TanakaM. Yoshida OriginalPaper Pages: 441 - 447
Diffusion induced disorder of GaAs/AlGaAs superlattices I. HarrisonH. P. HoN. Baba-Ali OriginalPaper Pages: 449 - 456
Decomposition studies of triisopropylantimony and triallylantimony S. H. LiC. A. LarsenR. W. Gedridge OriginalPaper Pages: 457 - 463
Diffusion of zinc into gaas layers grown by molecular beam epitaxy at low substrate temperatures Y. K. SinY. HwangR. M. Kolbas OriginalPaper Pages: 465 - 469
Selected-area GaAs epitaxial growth on Si free from detrimental sidewall interactions Y. C. KaoE. A. BeamD. J. Sesler OriginalPaper Pages: 471 - 475
Effect of sintering and poling conditions on the properties of [Pb,Sr][(Zr,Ti)(Zn,Nb)(Mg,Nb)]O3 piezoelectric ceramics system Chung-Heuy WangChich-Kwo LiangLong Wu OriginalPaper Pages: 477 - 481
Zinc telluride films by photoenhanced metalorganic chemical vapor deposition T. L. ChuShirley S. ChuC. Q. Wu OriginalPaper Pages: 483 - 488
Epitaxially stabilized GexSn1−x diamond cubic alloys E. A. FitzgeraldP. E. FreelandL. C. Kimerling OriginalPaper Pages: 489 - 501
Laser enhanced epitaxial growth of gallium arsenide from elemental arsenic T. L. ChuShirley S. ChuR. F. Green OriginalPaper Pages: 503 - 507
