Characterization of InP grown by OMVPE using trimethylindium and tertiarybutylphosphine (TBP) at low V/III ratios and reduced TBP partial pressures F. G. KellertJ. S. WhelanK. T. Chan OriginalPaper Pages: 355 - 360
Epitaxial layer thickness measurements by reflection spectroscopy L. E. TarofC. J. MinerA. J. Springthorpe OriginalPaper Pages: 361 - 367
In situ FTIR and surface analysis of the reaction of trimethylgallium and ammonia D. MazzareseA. TripathiD. W. Eckart OriginalPaper Pages: 369 - 377
Piezoreflectance characterization of resonant tunneling and modulation-doped heterostructures R. L. ToberJ. PamulapatiJ. E. Oh OriginalPaper Pages: 379 - 384
C-V and C-t analysis of buried oxide layers formed by high-dose oxygen implantation F. T. BradyS. S. LiW. A. Krull OriginalPaper Pages: 385 - 389
Identification of the acceptor level V3+/2+ in GaAs and a new experimental observation of V2 in “low spin” ground state in GaAs G. BremondN. HizemW. Ulrici OriginalPaper Pages: 391 - 397
Effects of In and Sb doping in LPE growth thermodynamics and in GaAs layer qualities J. F. ChenC. R. Wie OriginalPaper Pages: 399 - 406
The formation of subgrain boundaries in GaAs single crystals H. LessoffR. Gorman OriginalPaper Pages: 407 - 410
Filling of light emitting diode via-holes by MOCVD E. S. JohnsonG. E. Legg OriginalPaper Pages: 411 - 419
Explicit incorporation of the energy-band structure into an analysis of the defect chemistry of PbTe and SnTe Yi Gao ShaRobert F. Brebrick OriginalPaper Pages: 421 - 443
Annealing effects in the Ag/Al-(100) InP system: Al redistribution and film recrystallization J. DunnH. R. JenG. B. Stringfellow OriginalPaper Pages: 445 - 451
Characterization of MOCVD-grown CdMnTe films by infrared spectroscopy R. SudharsananZ. C. FengA. Erbil OriginalPaper Pages: 453 - 455
Pyrolysis of tertiarybutylphosphine S. H. LiC. A. LarsenG. B. Stringfellow OriginalPaper Pages: 457 - 464
Material characterization of an ion-implantation process for p-type (InGa)As/GaAs quantum-well structures D. R. MyersE. D. JonesJ. E. Schirber OriginalPaper Pages: 465 - 472