Volume 15, Issue 1 | Journal of Electronic Materials

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Volume 15, Issue 1

January 1986

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9 articles in this issue

Effects of various implant species and post-anneal treatments on SI N-channel MOSFETs
W. F. Tseng
R. H. Hevey
G. E. Davis
OriginalPaper Pages: 1 - 6
Processing characteristics of tin and tungsten oxides relevant to production of gas sensors
H. Torvela
T. Jaakola
S. Leppävuori
OriginalPaper Pages: 7 - 11
OMVPE growth of 660 nm AIGaAs double heterojunction LEDs
F. G. Kellert
R. L. Moon
OriginalPaper Pages: 13 - 19
Determination of the si-conducting polymer interfacial properties using A-C impedance techniques
G. Nagasubramanian
Salvador Stefano
Jo Moacanin
OriginalPaper Pages: 21 - 25
Photo CVD system for silicon nitride film
Y. Numasawa
K. Yamazaki
K. Hamano
OriginalPaper Pages: 27 - 30
Rapid Thermal annealing of si implanted GaAs
Y. J. Chan
M. S. Lin
OriginalPaper Pages: 31 - 36
Molecular beam epitaxy of in_1-xGa_xAS_yP_1-y(y ≃2.2 ×) lattice matched to InP using gas cells
D. Huet
M. Lambert
OriginalPaper Pages: 37 - 40
Studies of the Ga_1-xIn_xAs_1-ySb_y quaternary alloy system I. liquid-phase epitaxial growth and assessment
M. Astles
H. Hill
M. L. Young
OriginalPaper Pages: 41 - 49
Studies of the Ga_1-xI^As_1-ySb_y quaternary alloy system:-II characterisation by far-infrared reflectance spectroscopy
C. Pickering
OriginalPaper Pages: 51 - 56