Neutron transmutation doping of high purity GaAs T. S. LowM. H. KimG. E. Stillman OriginalPaper Pages: 477 - 511
Oxidation through the zirconia substrates of heteroepitaxial silicon films Grown on yttria-stabilized cubic zirconia I. GoleckiR. L. MaddoxH. M. Manasevit OriginalPaper Pages: 531 - 550
Far infrared characterization of Hg1-xCdxTe and related electronic materials S. Perkowitz OriginalPaper Pages: 551 - 562
The effect of gas temperature on the growth of InP by atomspheric pressure metal-organic chemical vapor deposition using trimethyl indium and PH3 sources J. L. ZilkoD. L. Van HarenS. Y. Leung OriginalPaper Pages: 563 - 572
Room temperature deposition of silicon nitride films using very low frequency (50Hz) plasma CVD M. ShimozumaK. KitamoriH. Tagashira OriginalPaper Pages: 573 - 586
The quartz-envelope heater: A new heater for metal-organic chemical vapor deposition systems S. I. BoldishJ. S. CiofaloJ. P. Wendt OriginalPaper Pages: 587 - 615
Properties of thin LPCVD silicon oxynitride films P. PanJ. AbernatheyC. Schaefer OriginalPaper Pages: 617 - 632
MOCVD epitaxial growth of single crystal GaN, AlN and AlxGa1-xN M. MatloubianM. Gershenzon OriginalPaper Pages: 633 - 644