The germanium selenide/polymer bilevel photoresist system — A review P. G. HuggettH. W. Lehmann ReviewPaper Pages: 205 - 230
Characterization of GaxIn1−xAs grown with TMIn C. P. KuoR. M. CohenG. B. Stringfellow OriginalPaper Pages: 231 - 244
Variable temperature hall effect on p-Hg1−xCdxTe grown on CdTe and sapphire substrates by liquid phase epitaxy D. D. EdwallE. R. GertnerW. E. Tennant OriginalPaper Pages: 245 - 268
Stoichiometry control of CdSx Se1−x and its effects on photoelectrical properties K. MochizukiO. Shibazaki OriginalPaper Pages: 269 - 282
The effect of Ti:W barrier metal on characteristics of palladium-silicide Schottky barrier diodes V. F. Drobny OriginalPaper Pages: 283 - 296
Structural and electronic properties of CuInSe2 A. Vahid ShahidiI. ShihC. H. Champness OriginalPaper Pages: 297 - 310
Si- and Mg-implanted InP, GaInAs and short-time proximity cap annealing U. KönigJ. HilgarthH. H. Tiemann OriginalPaper Pages: 311 - 327
Electrical properties of silicon dioxide films fabricated at 700°C. I: Pyroltsis of tetraethoxysilane R. H. VogelS. R. ButlerF. J. Feigl OriginalPaper Pages: 329 - 342
Electrical properties of silicon dioxide films fabricated at 700°C. II: Low pressure hydride deposition M. E. ZvanutF. J. FeiglS. L. Titcomb OriginalPaper Pages: 343 - 366
The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE A. S. BrownS. C. PalmateerA. R. Calawa OriginalPaper Pages: 367 - 378
Sodium transport in polyimide-SiO2 systems H. J. NeuhausD. R. DayS. D. Senturia OriginalPaper Pages: 379 - 404