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The germanium selenide/polymer bilevel photoresist system — A review

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Abstract

The germanium selenide/polymer bilevel photoresist system is reviewed covering the literature up to mid 1984. The review is oriented towards the prospects of germanium selenide as a high resolution photoresist for VLSI production and covers the preparation of the lithographic product and its processing. These processes include sensitization, exposure, fixing and development. The mechanism of silver photodoping in germanium selenide is also discussed. After considering the outstanding problems, it is concluded that the photoresist system has reached a sufficient degree of maturity for implementation in a production environment.

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  1. P. G. Huggett

    Present address: Plessey Research (Caswell) Ltd., Towcester, Northants, England

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  1. Laboratories RCA Ltd., CH-8048, Zurich, Switzerland

    P. G. Huggett & H. W. Lehmann

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Huggett, P.G., Lehmann, H.W. The germanium selenide/polymer bilevel photoresist system — A review. J. Electron. Mater. 14, 205–230 (1985). https://doi.org/10.1007/BF02661219

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