Characterization of defects in hydrogenated amorphous silicon devices using charge collection scanning electron microscopy B. G. YacobiR. J. MatsonC. R. Herrington OriginalPaper Pages: 843 - 854
Surface treatment of GaSb substrate and extremely low temperature LPE growth of AlGaSb Y. TakedaS. NodaA. Sasaki OriginalPaper Pages: 855 - 866
Open-tube vapor transport epitaxy of Hg1−xCdxTe Y. NemirovskyA. Kepten OriginalPaper Pages: 867 - 895
Rapid capless annealing of28Si,64Zn, and9Be implants in GaAs S. G. LiuS. Y. Narayan OriginalPaper Pages: 897 - 911
Characteristics of thermally nitrided silicon dioxide film and plasma enhancement I. KatoT. ItoH. Ishikawa OriginalPaper Pages: 913 - 929
Non-destructive characterization of electrical uniformity in semi-insulating GaAs substrates by microwave photoconductance technique Hideki HasegawaHideo OhnoShouhei Seki OriginalPaper Pages: 931 - 948
Crystalline properties of multiple BP-Si layers grown on silicon substrate S. SugiuraT. YoshidaD. J. Dumin OriginalPaper Pages: 949 - 954
Effects of differential etching and masking resist preparation on the quality of the reactive-ion-etched aluminum and aluminum alloys Shih-Chia Chang OriginalPaper Pages: 955 - 967
Evidence for transient composition variations at GaAs/Ga1−xAlxAs heterostructure interfaces prepared by metal-organic chemical vapour deposition E. J. ThrushG. Wale-EvansR. J. M. Griffiths OriginalPaper Pages: 969 - 988