The growth and characterization of low resistivity n-type ZnSy Sel-y on (100) GaAs Anthony M. PattersonJ. O. Williams OriginalPaper Pages: 621 - 633
Formation of buried oxide layers by high dose implantation of oxygen ions in silicon K. DasJ. B. ButcherK. V. Anand OriginalPaper Pages: 635 - 654
The effects of V/III ratio and growth temperature on the electrical and optical properties of InP grown by low-pressure metalorganic chemical vapor deposition D. KasemsetK. L. HessJ. L. Merz OriginalPaper Pages: 655 - 671
Residual disorder in low-temperature polycrystalline silicon E. BustarretA. DeneuvilleM. Brunel OriginalPaper Pages: 673 - 687
MO-CVD growth of InGaAs using Me3Ga, AsMe3, AsH3 and Me3In or Et3 in and analyses of adducts formed during the growth process C. H. ChengK. A. JonesK. M. Motyl OriginalPaper Pages: 703 - 726