1. The growth and characterization of low resistivity n-type ZnS_y Se_l-y on (100) GaAs

   • Anthony M. Patterson
   • J. O. Williams

   OriginalPaper Pages: 621 - 633

2. Formation of buried oxide layers by high dose implantation of oxygen ions in silicon

   • K. Das
   • J. B. Butcher
   • K. V. Anand

   OriginalPaper Pages: 635 - 654

3. The effects of V/III ratio and growth temperature on the electrical and optical properties of InP grown by low-pressure metalorganic chemical vapor deposition

   • D. Kasemset
   • K. L. Hess
   • J. L. Merz

   OriginalPaper Pages: 655 - 671

4. Residual disorder in low-temperature polycrystalline silicon

   • E. Bustarret
   • A. Deneuville
   • M. Brunel

   OriginalPaper Pages: 673 - 687

5. Lithography with silicon ions

   • I. Adesida
   • M. Zhang
   • E. D. Wolf

   OriginalPaper Pages: 689 - 701

6. MO-CVD growth of InGaAs using Me₃Ga, AsMe₃, AsH₃ and Me₃In or Et₃ in and analyses of adducts formed during the growth process

   • C. H. Cheng
   • K. A. Jones
   • K. M. Motyl

   OriginalPaper Pages: 703 - 726

7. EMC student awards program

   Announcement Pages: 727 - 729

8. Advances in electronic materials

   Announcement Pages: 731 - 731

9. Advances in electronic materials

   Announcement Pages: 732 - 732