Defect chemistry and intrinsic carrier concentration for Hg1−x Cdx Te(s) for x = 0.20, 0.40, and 1.0 Ching-Hua SuPok-Kai LiaoR. F. Brebrick OriginalPaper Pages: 771 - 826
Infrared reflectance and absorption of N-type InP O. K. KimW. A. Bonner OriginalPaper Pages: 827 - 836
A Chemical thinning technique for transmission electron microscopy cross-sectional samples R. J. Gaboriaud OriginalPaper Pages: 837 - 844
Simox technology and its application to CMOS LSIS K. IzumiY. ŌmuraT. Sakai OriginalPaper Pages: 845 - 861
Self-Diffusion in gallium arsenide H. D. PalfreyM. BrownA. F. W. Willoughby OriginalPaper Pages: 863 - 877
Measurement of impurities in a multi-doped sample of cadmium mercury telluride J. B. CleggJ. B. MullinR. Snook OriginalPaper Pages: 879 - 889
High- Purity inp grown by hydride vpe technique with impurity gettering by indium source and oxygen Akira UsuiHisatsune Watanabe OriginalPaper Pages: 891 - 902
The preparation and characterization of strained-layer superlattices in the GaAs + GaP System R. M. BlefeldG. C. OsbournI. J. Fritz OriginalPaper Pages: 903 - 915
