Oxidation of Hg1−xCdxTe studied with surface sensitive techniques P. MorgenJ. A. SilbermanJ. A. Wilson OriginalPaper Pages: 597 - 610
Growth and characterization of Cd-Doped InGaAsP/InP double heterostructure lasers N. Tamari OriginalPaper Pages: 611 - 629
Accelerated degradation in GaP and GaAsxPl−x(x=0.15∼0.32) visible leds by contaminant Cu during forward bias operation A. YahataH. AbeT. Beppu OriginalPaper Pages: 631 - 645
The effect of a continuous etch on the growth rate and morphology of InP prepared by the vapor phase epitaxial-hydride method Thomas E. ErstfeldKenneth P. Quinlan OriginalPaper Pages: 647 - 662
Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet M. FengV. K. EuJ. M. Whelan OriginalPaper Pages: 663 - 688
Analysis of mercury cadmium telluride by energy dispersive analysis Donald C. Gillies OriginalPaper Pages: 689 - 697
Electrical properties of carbon-polymer composites E. K. SichelJ. I. GittlemanPing Sheng OriginalPaper Pages: 699 - 747
An investigation of microcrystalline films produced by a dc glow discharge in silane and hydrogen D. E. CarlsonR. W. Smith OriginalPaper Pages: 749 - 760
Properties of a high resolution negative photoresist K. NeisiusH. J. Merrem OriginalPaper Pages: 761 - 778
Silicon-germanium alloy growth control and characterization Leslie I. HalbergJoseph H. Nevin OriginalPaper Pages: 779 - 793
Variations of trap states and dangling bonds in CVD Si3N4 layer on Si substrate by NH3/SiH4 ratio Shizuo FujitaHideo ToyoshimaAkio Sasaki OriginalPaper Pages: 795 - 812
Minority carrier diffusion lengths in liquid phase epitaxial InGaAsP and InGaAs M. M. TashimaL. W. CookG. E. Stillman OriginalPaper Pages: 831 - 846
Low temperature photoluminescence of lightly Si-doped and undoped MBE GaAs F. BrionesDouglas M. Collins OriginalPaper Pages: 847 - 866