Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells Z. ChenN. FichtenbaumS. Nakamura OriginalPaper Open access 06 December 2007 Pages: 546 - 549
Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors B.S. KangH.T. WangK.J. Linthicum OriginalPaper 25 September 2007 Pages: 550 - 553
Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures M. KocanG.A. Umana-MembrenoG. Parish OriginalPaper 15 November 2007 Pages: 554 - 557
Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers J.P. LiuJ.B. LimbR.D. Dupuis OriginalPaper 30 November 2007 Pages: 558 - 563
Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-Al0.58Ga0.42N M.A. MillerB.H. KooS.E. Mohney OriginalPaper 28 September 2007 Pages: 564 - 568
Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition G.A. Umana-MembrenoG. ParishB.D. Nener OriginalPaper 25 October 2007 Pages: 569 - 572
Growth of GaN Films on Si (100) Buffered with ZnO by Ion-Beam-Assisted Filtered Cathodic Vacuum Arc Technique Xiao Hong JiJi Wei Zhai OriginalPaper 26 October 2007 Pages: 573 - 577
Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption Yuh-Renn WuJohn M. HinckleyJasprit Singh OriginalPaper 01 November 2007 Pages: 578 - 584
Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks Z. CaiS. GarzonG. Koley OriginalPaper 30 November 2007 Pages: 585 - 592
Effect of MBE Growth Conditions on Multiple Electron Transport in InN Tamara B. FehlbergChad S. GallinatGiacinta Parish OriginalPaper 27 November 2007 Pages: 593 - 596
Cathodoluminescence Study on Spatial Luminescence Properties of InN/GaN Multiple Quantum Wells Consisting of 1-Monolayer-Thick InN Wells/GaN Matrix E.S. HwangS.B. CheA. Yoshikawa OriginalPaper 21 December 2007 Pages: 597 - 602
Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence T. AkagiK. KosakaY. Nanishi OriginalPaper 17 January 2008 Pages: 603 - 606
Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes J. SenawiratneY. LiC. Wetzel OriginalPaper 12 January 2008 Pages: 607 - 610
Optical Hall Effect in Hexagonal InN T. HofmannV. DarakchievaM. Schubert OriginalPaper 02 February 2008 Pages: 611 - 615
Effect of Anodic Oxidation on the Characteristics of Lattice-Matched AlInN/GaN Heterostructures C. PietzkaA. DenisenkoE. Kohn OriginalPaper 01 February 2008 Pages: 616 - 623
Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures Chung-Yu LuEdward Yi ChangChing-Tung Lee OriginalPaper 07 February 2008 Pages: 624 - 627
Crystalline SiN x Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition Toshiyuki TakizawaSatoshi NakazawaTetsuzo Ueda OriginalPaper 06 February 2008 Pages: 628 - 634
Formation of Low-Resistance Ohmic Contact by Damage-Proof Selective-Area Growth of Single-Crystal n +-GaN Using Plasma-Assisted Molecular Beam Epitaxy Hui-Chan SeoSeung Jae HongKyekyoon(Kevin) Kim OriginalPaper 05 February 2008 Pages: 635 - 640
Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy M. ZhuY. XiaC. Wetzel OriginalPaper 13 February 2008 Pages: 641 - 645
Some Critical Materials and Processing Issues in SiC Power Devices Anant AgarwalSarah Haney OriginalPaper Open access 21 November 2007 Pages: 646 - 654
Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence Y.N. PicardK.X. LiuM.E. Twigg OriginalPaper Open access 30 October 2007 Pages: 655 - 661
1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70 Charlotte JonasCraig CapellCharles Scozzie OriginalPaper 08 November 2007 Pages: 662 - 665
The Effects of Implant Activation Anneal on the Effective Inversion Layer Mobility of 4H-SiC MOSFETs Sarah HaneyAnant Agarwal OriginalPaper 30 October 2007 Pages: 666 - 671
Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p + n Junction Diodes Grown on 4H-SiC Mesas Kevin M. SpeerPhilip G. NeudeckPirouz Pirouz OriginalPaper 05 October 2007 Pages: 672 - 680
Structural and Morphological Investigation of Pendeo-Epitaxy 3C-SiC on Si Substrates Byeung C. KimMichael A. Capano OriginalPaper 09 October 2007 Pages: 681 - 684
Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC B.L. VanMilK.K. LewD.K. Gaskill OriginalPaper 09 October 2007 Pages: 685 - 690
Epitaxial SiC Growth Morphology and Extended Defects Investigated by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging Yoosuf N. PicardMark E. TwiggJ. Anthony Powell OriginalPaper 09 October 2007 Pages: 691 - 698
Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes Joshua D. CaldwellOrest J. GlembockiKarl D. Hobart OriginalPaper 01 November 2007 Pages: 699 - 705
Investigation of Electron–Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers Yi ChenNing ZhangDavid R. Black OriginalPaper 07 November 2007 Pages: 706 - 712
Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses Yi ChenMichael DudleyMichael F. MacMillan OriginalPaper 13 November 2007 Pages: 713 - 720
Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles Jikuan ChengJiqiang GaoRui Guo OriginalPaper 27 November 2007 Pages: 721 - 725
Silicon Carbide Terahertz Emitting Devices G. XuanP.-C. LvA. Powell OriginalPaper 23 January 2008 Pages: 726 - 729
Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging Kendrick X. LiuRobert E. StahlbushCharles R. Eddy OriginalPaper 02 April 2008 Pages: 730 - 735
Growth of Polarity-Controlled ZnO Films on (0001) Al2O3 J.S. ParkJ.H. ChangT. Yao ReviewPaper Open access 30 November 2007 Pages: 736 - 742
First-Principles Studies of Metal (111)/ZnO{0001} Interfaces Yufeng DongL.J. Brillson OriginalPaper Open access 02 October 2007 Pages: 743 - 748
Quantum Confinement and Carrier Localization Effects in ZnO/Mg x Zn1−x O Wells Synthesized by Pulsed Laser Deposition W.E. BowenW. WangJ.D. Phillips OriginalPaper 26 September 2007 Pages: 749 - 754
ZnO Thin Film, Device, and Circuit Fabrication using Low-Temperature PECVD Processes Jie SunDevin A. MoureyThomas N. Jackson OriginalPaper 21 December 2007 Pages: 755 - 759
A High-Performance Ultraviolet Photoconductive Detector Based on a ZnO Film Grown by RF Sputtering Zhen BiJingwen ZhangXun Hou OriginalPaper 30 October 2007 Pages: 760 - 763
Annealing Studies on Zinc Oxide Thin Films Deposited by Magnetron Sputtering Tingfang YenDave StromeWayne A. Anderson OriginalPaper 12 December 2007 Pages: 764 - 769
Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures R.S. AjimshaM.K. JayarajL.M. Kukreja OriginalPaper 20 February 2008 Pages: 770 - 775
