Thermal Expansion and Thermal Conductivity of (In2S3)x(AgIn5S8)1 – x Alloys I. V. BodnarA. A. FeshchenkoV. V. Khoroshko NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION) 19 February 2021 Pages: 133 - 136
Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces N. T. BagraevS. A. KukushkinV. S. Khromov ELECTRONIC PROPERTIES OF SEMICONDUCTORS 19 February 2021 Pages: 137 - 145
Structural and Electronic Properties of ZnSiAs2, ZnSnAs2, and Their Mixed Crystals ZnSi1 – xSnxAs2 B. MecheriH. MeradjiM. Boukhtouta ELECTRONIC PROPERTIES OF SEMICONDUCTORS 19 February 2021 Pages: 146 - 153
Effect of Carrier Heating by the GaAs Picosecond Stimulated Emission on Duration of Emission N. N. AgeevaI. L. BronevoiA. N. Krivonosov SPECTROSCOPY, INTERACTION WITH RADIATION 19 February 2021 Pages: 154 - 161
Amplification Lengths of Spectral Components of Intrinsic Stimulated Picosecond Emission. Dependence of the Characteristic Relaxation Time of These Components on Their Amplification Lengths. Relation Between Stimulated and Spontaneous Emission Spectra in GaAs N. N. AgeevaI. L. BronevoiA. N. Krivonosov SPECTROSCOPY, INTERACTION WITH RADIATION 19 February 2021 Pages: 162 - 167
Radiative Recombination at Ion-Induced Defects in Cu(In,Ga)Se2 Alloy Thin Films O. M. BorodavchenkoV. D. ZhivulkoI. A. Mogilnikov SPECTROSCOPY, INTERACTION WITH RADIATION 19 February 2021 Pages: 168 - 174
Molecular-Dynamics Study of Dimer Formation on a GaAs (001) Surface at Low Temperatures N. D. PrasolovA. A. GutkinP. N. Brunkov SURFACES, INTERFACES, AND THIN FILMS 19 February 2021 Pages: 175 - 178
Study of Alkali (Na,K)-Doped Cu2ZnSnS4 Thin Films Prepared by Sol–Gel Method R. HosseinpourM. IzadifardM. E. Ghazi SURFACES, INTERFACES, AND THIN FILMS 19 February 2021 Pages: 179 - 193
Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy D. S. AbramkinM. O. PetrushkovV. V. Preobrazhenskiy SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 19 February 2021 Pages: 194 - 201
Giant Magnetoresistance in a Metal–Organic Semiconductor–Metal Structure A. A. LachinovD. D. KaramovA. N. Lachinov SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 19 February 2021 Pages: 202 - 206
The Effect of the Ionizing Radiation Intensity on the Response of MOS Structures O. V. Aleksandrov SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 19 February 2021 Pages: 207 - 213
Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers A. S. GazizulinaA. A. NasirovDojin Kim SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 19 February 2021 Pages: 214 - 218
Photoaccumulating Nanoheterostructures Based on Titanium Dioxide E. A. KonstantinovaV. B. ZaitsevA. V. Marikutsa MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 19 February 2021 Pages: 219 - 227
Multicomponent Diamond-Like Semiconductors Based on the InBV–CdS System: Bulk and Surface Properties I. A. KirovskayaT. N. FilatovaP. E. Nor MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 19 February 2021 Pages: 228 - 233
Model Estimates of the Quantum Capacitance of Amorphous and Epitaxial Graphene-Like Compounds S. Yu. Davydov CARBON SYSTEMS 19 February 2021 Pages: 234 - 242
High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination P. A. IvanovN. M. LebedevaYu. M. Zadiranov PHYSICS OF SEMICONDUCTOR DEVICES 19 February 2021 Pages: 243 - 249
Taking Account of the Substrate in Calculation of the Electrical Resistance of Microdisk Lasers A. E. ZhukovN.V. KryzhanovskayaA. S. Dragunova PHYSICS OF SEMICONDUCTOR DEVICES 19 February 2021 Pages: 250 - 255
TCAD Simulation of High-Voltage 4H-SiC Diodes with an Edge Semi-Insulating Region P. A. IvanovN. M. Lebedeva PHYSICS OF SEMICONDUCTOR DEVICES 19 February 2021 Pages: 256 - 261
Analysis and Measurement of Capacitance Characteristics of a Novel Light-Controlled Dual-Directional Gate Silicon-Controlled Rectifier F. YanY. WangJ. Yang PHYSICS OF SEMICONDUCTOR DEVICES 19 February 2021 Pages: 262 - 271
Recent Developments in Semipolar InGaN Laser Diodes Aparna Das PHYSICS OF SEMICONDUCTOR DEVICES 19 February 2021 Pages: 272 - 282
Three-Component Zone-Melting Method: Modeling of the Concentration-Component Distribution in Single Crystals of Ge–Si Solid Solutions Z. A. Aghamaliyev FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 19 February 2021 Pages: 283 - 288