Method for Predicting the Effective Conductivity of Textured Polycrystals Taking Intergranular Gaps into Consideration I. V. Lavrov BASIC RESEARCH 30 December 2021 Pages: 1003 - 1007
Spin Valves in Microelectronics (A Review) Iu. A. IusipovaA. I. Popov BASIC RESEARCH 30 December 2021 Pages: 1008 - 1020
Prediction of the Effective Permittivity of Foam Polymer Materials I. V. LavrovV. V. BardushkinA. V. Bardushkin ELECTRONICS MATERIALS 30 December 2021 Pages: 1021 - 1023
Effect of Fullerene Encapsulation on Optical and Thermoelectrical Properties of Carbon Nanotubes E. V. MorozovaD. A. Timkaeva ELECTRONICS MATERIALS 30 December 2021 Pages: 1024 - 1028
Prediction of Conditions for Chloride–Hydride Epitaxy of Ga1 – yInyAs1 – xPx Layers Isoperiodic with GaAs and GaAs1 – xPx E. N. Vigdorovich ELECTRONICS MATERIALS 30 December 2021 Pages: 1029 - 1032
Electron-Microscopy Studies of the Structure of Thin Epitaxial Ge2Sb2Te5 Layers Grown on Si(111) Substrates Yu. S. ZaytsevaN. I. BorgardtR. Calarco ELECTRONICS MATERIALS 30 December 2021 Pages: 1033 - 1038
Normally-Off p-Gate Transistor Based on AlGaN/GaN Heterostructures V. I. EgorkinV. A. BespalovO. B. Kukhtyaeva ELEMENTS OF INTEGRATED ELECTRONICS 30 December 2021 Pages: 1039 - 1044
Analysis of Degradation Mechanisms of Gate Dielectrics Based on SiO2 in MOS Transistors D. A. EliseevaS. O. Safonov ELEMENTS OF INTEGRATED ELECTRONICS 30 December 2021 Pages: 1045 - 1048
Investigation of the Dynamic Range of Silicon Photomultiplier Tubes A. O. ZenevichO. V. Kochergina ELEMENTS OF INTEGRATED ELECTRONICS 30 December 2021 Pages: 1049 - 1054
Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics A. V. AfanasevV. A. IlyinS. A. Reshanov TECHNOLOGICAL PROCESSES AND ROUTES 30 December 2021 Pages: 1055 - 1062
Study of the Sensitivity of Porous SnO2-Based Thick-Film Elements to the Hydrogen Concentration in Air V. V. AmelichevS. S. GeneralovV. V. Krivetskiy MICRO- AND NANOSYSTEM TECHNOLOGY 30 December 2021 Pages: 1063 - 1066