Abstract
For the creation of memory cells of new generation, structurally perfect epitaxial Ge2Sb2Te5 (GST) layers and multilayered crystalline structures based on GeTe/Sb2Te3 superlattices grown on Si substrates are of interest. This initiates the studies of specific features of formation of such materials by various methods, including molecular-beam epitaxy. In this study, the structure of a thin (13-nm-thick) epitaxial GST layer to be used for the production of phase-change memory cells is investigated. The layers are grown by molecular-beam epitaxy on Sb-passivated Si(111) substrates. The studies are conducted by transmission electron microscopy and electron diffraction analysis of cross- and planar-section samples. The high resolution images of cross-section samples and the diffraction patterns for planar-section thin foils and their bright-field micrographs are obtained. It is found that the layer is composed of structurally perfect crystalline grains consisting mainly of the hexagonal phase and, in some local regions, of the ordered GST cubic phase, whose basal planes are parallel to the substrate surface. From the quantitative analysis of the moiré pattern appearing in bright-field electron-microscopy images, it is established that the grains, for which the GST(\(11\bar {2}0\)) and Si(220) planes are rotated with respect to each other about the growth direction through up to 2°, occupy about 60% of the surface area of the epitaxial layer and 26% of the area is accounted for practically nonrotated grains. The fraction of the area occupied by grains misoriented with respect to the substrate by angles from 2° to 8° is close to 33%, and the grains occupying about 7% of the layer area are rotated through angles larger than 8°. The average angle of rotation angle is about 2.6°. The estimated average dimension of nonrotated grains is about 150 nm and decreases with increasing angle of rotation relative to the substrate. The experimentally established systematic features of the grain structure of the epitaxial GST layer suggest that the Si(111) substrate has an orienting effect upon the formation of the layer.
Similar content being viewed by others
REFERENCES
A. Redaelli, Phase Change Memory: Device Physics, Reliability and Applications (Springer Int., Cham, 2018). https://doi.org/10.1007/978-3-319-69053-7
A. Lotnyk, M. Behrens, and B. Rauschenbach, Nanoscale Adv. 1, 3836 (2019). https://doi.org/10.1039/C9NA00366E
R. E. Simpson, P. Fons, A. V. Kolobov, et al., Nat. Nanotechnol. 6, 501 (2011). https://doi.org/10.1038/nnano.2011.96
J. E. Boschker and R. Calarco, Adv. Phys. X 2, 675 (2017). https://doi.org/10.1080/23746149.2017.1346483
A. Lotnyk, T. Dankwort, I. Hilmi, et al., Nanoscale 11, 10838 (2019). https://doi.org/10.1039/C9NR02112D
H. B. Elswijk, D. Dijkkamp, and E. J. van Loenen, Phys. Rev. B 44, 3802 (1991). https://doi.org/10.1103/PhysRevB.44.3802
J. Momand, J. E. Boschker, R. Wang, et al., CrystEngComm. 20, 340 (2018). https://doi.org/10.1039/C7CE01825H
R. Wang, J. E. Boschker, E. Bruyer, et al., J. Phys. Chem. C 118, 29724 (2014). https://doi.org/10.1021/jp507183f
J. E. Boschker, J. Momand, V. Bragaglia, et al., Nano Lett. 14, 3534 (2014). https://doi.org/10.1021/nl5011492
I. Hilmi, E. Thelnader, P. Schumacher, et al., Thin Solid Films 619, 81 (2016). https://doi.org/10.1016/j.tsf.2016.10.028
T. Nakaoka, H. Satoh, S. Honjo, and H. Takeuchi, AIP Adv. 2, 042189 (2012). https://doi.org/10.1063/1.4773329
M. Bouška, S. Pechev, Q. Simon, et al., Sci. Rep. 6, 26552 (2016). https://doi.org/10.1038/srep26552
E. Zallo, S. Cecchi, J. E. Boschker, et al., Sci. Rep. 8 (1), 1 (2018).
I. Hilmi, A. Lotnyk, J. W. Gerlach, et al., APL Mater. 5, 050701 (2017). https://doi.org/10.1063/1.4983403
G. C. Sosso, S. Caravati, R. Mazzarello, and M. Bernasconi, Phys. Rev. B 83, 134201 (2011). https://doi.org/10.1103/PhysRevB.83.134201
E. Zallo, D. Dragoni, Y. Zaytseva, et al., Phys. Status Solidi (RRL) 15, 2000434 (2021). https://doi.org/10.1002/pssr.202170014
I. Hilmi, A. Lotnyk, J. W. Gerlach, et al., Mater. Des. 115, 138 (2017). https://doi.org/10.1016/j.matdes.2016.11.003
Y. Zheng, Y. Cheng, R. Huang, et al., Sci. Rep. 7, 5915 (2017). https://doi.org/10.1038/s41598-017-06426-2
Y. Takagaki, A. Giussani, K. Perumal, et al., Phys. Rev. B 86, 125137 (2012). https://doi.org/10.1103/PhysRevB.86.125137
S. Andrieu, J. Appl. Phys. 69, 1366 (1991). https://doi.org/10.1063/1.347274
J. Mayer, L. A. Giannuzzi, T. Kamino, and J. Michael, MRS Bull. 32, 400 (2007). https://doi.org/10.1557/mrs2007.63
W. Zhang, A. Thiess, P. Zalden, et al., Nat. Mater. 11, 952 (2012). https://doi.org/10.1038/nmat3456
STEM_CELL, (Quantum) e-Optics and TEM GROUP, CNRNANO. http://tem-s3.nano.cnr.it/?page_id=2. Accessed April 08, 2020.
V. Grillo and E. Rotunno, Ultramicroscopy 125, 97 (2013). https://doi.org/10.1016/j.ultramic.2012.10.016
D. B. Williams and C. B. Carter, Transmission Electron Microscopy. A Textbook for Materials Science (Springer US, New York, 2009). https://doi.org/10.1007/978-0-387-76501-3
Funding
The study was supported by the Ministry of Education and Science of the Russian Federation, subject no. АААА-А20-120071490069-9, agreement no. 075-03-2020-216, code 0719-2020-001. The study was carried out using the equipment of the Multiple-Access Center “Diagnostics and Modification of Microstructures and Nanoobjects.”
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated by E. Smorgonskaya
Rights and permissions
About this article
Cite this article
Zaytseva, Y.S., Borgardt, N.I., Prikhodko, A.S. et al. Electron-Microscopy Studies of the Structure of Thin Epitaxial Ge2Sb2Te5 Layers Grown on Si(111) Substrates. Semiconductors 55, 1033–1038 (2021). https://doi.org/10.1134/S106378262113011X
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S106378262113011X