Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review) M. V. Lebedev REVIEW 30 June 2020 Pages: 699 - 741
First-Principle Investigation of the (001) Surface Reconstructions of GaSb and InSb Semiconductors A. V. BakulinS. E. Kulkova SURFACES, INTERFACES, AND THIN FILMS 30 June 2020 Pages: 742 - 753
Effect of Interfaces and Thickness on the Crystallization Kinetics of Amorphous Germanium Films G. K. KrivyakinV. A. VolodinA. A. Popov SURFACES, INTERFACES, AND THIN FILMS 30 June 2020 Pages: 754 - 758
AlGaInSbAs Solid Solutions Grown on InAs Substrates by Zone Recrystallization with a Temperature Gradient L. S. LuninM. L. LuninaN. M. Bogatov SURFACES, INTERFACES, AND THIN FILMS 30 June 2020 Pages: 759 - 764
Scattering Matrix Method for Calculating the Spontaneous-Emission Probability in Cylindrically Symmetric Structures V. V. NikolaevK. A. IvanovA. V. Belonovski SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 30 June 2020 Pages: 765 - 773
2D SiC/Si Structure: Electron States and Adsorbability S. Yu. DavydovA. V. Zubov SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 30 June 2020 Pages: 774 - 781
Formation of GaN Nanorods in Monodisperse Spherical Mesoporous Silica Particles E. Yu. StovpiagaD. A. KurdyukovV. G. Golubev SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 30 June 2020 Pages: 782 - 787
Doping-Dependent Nonlinear Electron Mobility in GaAs|InxGa1 –xAs Coupled Quantum-Well Pseudo-Morphic MODFET Structure S. R. PandaA. SahuT. Sahu SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 30 June 2020 Pages: 788 - 795
Photodiodes for Detecting the Emission of Quantum-Sized Disc Lasers Operating in the Whispering Gallery Modes (2.2–2.3 μm) E. V. KunitsynaM. A. RoyzYu. P. Yakovlev PHYSICS OF SEMICONDUCTOR DEVICES 30 June 2020 Pages: 796 - 802
Investigation of Pd|HfO2|AlGaN|GaN Enhancement-Mode High Electron Mobility Transistor with Sensitization, Activation, and Electroless-Plating Approaches Y.-C. LinJ.-S. NiuJ.-H. Tsai PHYSICS OF SEMICONDUCTOR DEVICES 30 June 2020 Pages: 803 - 810
Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon D. V. YurasovN. A. BaídakovaA. V. Novikov FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 30 June 2020 Pages: 811 - 816
GaAs Semiconductor Passivated by (NH4)2Sx: Analysis of Different Passivation Methods Using Electrical Characteristics and XPS Measurements H. MahmoodniaA. SalehiV. R. Mastelaro FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 30 June 2020 Pages: 817 - 826