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Formation of GaN Nanorods in Monodisperse Spherical Mesoporous Silica Particles

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
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Abstract

Gallium-nitride nanorods with a diameter of 15–40 nm and length of 50–150 nm are synthesized in monodisperse spherical mesoporous silica particles (MSMSPs) by high-temperature annealing of the Ga2O3 precursor in ammonia. The template material (a-SiO2) is selectively removed by etching the composite MSMSP/GaN particles with HF to give individual GaN nanorods. It is shown that the size of the GaN nanorods substantially exceeds the pore size of the MSMSPs (diameter ~3 nm, length ~10 nm). A possible mechanism by which GaN nanorods are formed is proposed. Redistribution of the material within the composite MSMSP/GaN particles possibly occurs via the surface diffusion of gaseous molecules within mesopores and via the diffusion of Ga and N atoms in a-SiO2.

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ACKNOWLEDGMENTS

We are grateful to A.N. Smirnov for Raman measurements of the GaN nanorods.

Measurements by transmission electron microscopy were performed on equipment of the federal Collective Use Center “Materials science and diagnostics in advanced technologies” (Ioffe Institute).

Funding

The study was financed by the State budget under State assignment no. 0040-2019-0012.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    E. Yu. Stovpiaga, D. A. Kurdyukov, D. A. Kirilenko & V. G. Golubev

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  1. E. Yu. Stovpiaga
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  2. D. A. Kurdyukov
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  3. D. A. Kirilenko
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  4. V. G. Golubev
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Correspondence to E. Yu. Stovpiaga.

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Translated by M. Tagirdzhanov

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Stovpiaga, E.Y., Kurdyukov, D.A., Kirilenko, D.A. et al. Formation of GaN Nanorods in Monodisperse Spherical Mesoporous Silica Particles. Semiconductors 54, 782–787 (2020). https://doi.org/10.1134/S106378262007012X

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  • DOI: https://doi.org/10.1134/S106378262007012X

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