Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction N. V. VostokovV. M. DaniltsevV. I. Shashkin XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1279 - 1281
2D Bragg Resonators Based on Planar Dielectric Waveguides (from Theory to Model-Based Testing) N. S. GinzburgN. Yu. PeskovD. I. Sobolev XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1282 - 1286
On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity Vl. V. KocharovskyV. A. KukushkinV. V. Kocharovsky XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1287 - 1294
Features of the Simultaneous Generation of Low-Q and High-Q Modes in Heterolasers Based on Quantum Dots with a Long Incoherent Relaxation Time of Optical Dipole Oscillations E. R. KocharovskayaA. V. MishinV. V. Kocharovsky XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1295 - 1303
Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots I. A. DerebezovV. A. GaislerS. Reitzenstein XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1304 - 1307
Coherence Dynamics of the Exciton-Polariton System in GaAs Microcavities under Pulse Resonant Photoexcitation V. D. KulakovskiiA. A. Demenev XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1308 - 1313
Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode K. M. MorozovA. V. BelonovskiiM. A. Kaliteevski XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1314 - 1317
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates A. V. NovikovD. V. YurasovZ. F. Krasilnik XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1318 - 1323
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics D. V. YurasovN. A. BaidakovaA. N. Yablonskiy XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1324 - 1328
Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals Zn. V. SmaginaV. A. ZinovyevA. V. Dvurechenskii XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1329 - 1333
On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium V. V. TsyplenkovV. N. Shastin XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1334 - 1339
On the Two-Phonon Relaxation of Excited States of Boron Acceptors in Diamond N. A. Bekin XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1340 - 1347
Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers E. A. ArkhipovaE. V. DemidovS. A. Bogdanov XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1348 - 1352
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors T. A. ShobolovaA. V. KorotkovV. A. Kozlov XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1353 - 1356
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers B. A. AndreevD. N. LobanovZ. F. Krasil’nik XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1357 - 1362
Residual-Photoconductivity Spectra in HgTe/CdHgTe Quantum-Well Heterostructures K. E. SpirinD. M. GaponovaS. A. Dvoretsky XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019 01 October 2019 Pages: 1363 - 1366
Magnetosonic Waves in a Two-Dimensional Electron Fermi Liquid P. S. Alekseev ELECTRONIC PROPERTIES OF SEMICONDUCTORS 01 October 2019 Pages: 1367 - 1374
Microwave Magnetic Absorption in HgSe with Co and Ni Impurities A. I. VeingerI. V. KochmanL. D. Paranchich ELECTRONIC PROPERTIES OF SEMICONDUCTORS 01 October 2019 Pages: 1375 - 1380
Electronic States of Nanosystems Based on Cadmium Sulfide in the Zinc-Blende Form V. G. ZavodinskyA. P. Kuz’menko SURFACES, INTERFACES, AND THIN FILMS 01 October 2019 Pages: 1381 - 1385
Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process N. D. PrasolovA. A. GutkinP. N. Brunkov SURFACES, INTERFACES, AND THIN FILMS 01 October 2019 Pages: 1386 - 1388
Influence of Hydrogen on the Electrical Properties of Pd/InP Structures V. A. ShutaevV. G. SidorovYu. P. Yakovlev SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 01 October 2019 Pages: 1389 - 1392
Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles M. M. SobolevD. A. YavsinS. A. Gurevich MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 01 October 2019 Pages: 1393 - 1397
Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers V. A. Kukushkin CARBON SYSTEMS 01 October 2019 Pages: 1398 - 1404
Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels N. Yu. GordeevA. S. PayusovM. V. Maximov PHYSICS OF SEMICONDUCTOR DEVICES 01 October 2019 Pages: 1405 - 1408
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes A. A. LebedevV. V. KozlovskiA. V. Zubov PHYSICS OF SEMICONDUCTOR DEVICES 01 October 2019 Pages: 1409 - 1413
Erratum to: Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two-Dimensional Electron Gas H. KhmissiA. M. El Sayed Erratum 01 October 2019 Pages: 1414 - 1414