Matrix Calculation of the Spectral Characteristics of AII–BVI Semiconductors Doped with Iron-Group Ions I. S. KurchatovE. F. Kustov Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 07 June 2018 Pages: 821 - 827
Kinetics of the Variation in the Magnetic Impurity Ion Concentration in Pb1–x–ySn x V y Te Alloys upon Doping E. P. SkipetrovN. S. KonstantinovV. E. Slynko Electronic Properties of Semiconductors 07 June 2018 Pages: 828 - 835
Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion D. V. IshchenkoI. G. Neizvestny Electronic Properties of Semiconductors 07 June 2018 Pages: 836 - 839
Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation Z. A. JahangirliF. M. HashimzadeN. B. Mustafaev Electronic Properties of Semiconductors 07 June 2018 Pages: 840 - 842
Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation A. N. TereshchenkoD. S. KorolevE. A. Steinman Spectroscopy, Interaction with Radiation 07 June 2018 Pages: 843 - 848
Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates L. P. AvakyantsP. Yu. BokovA. V. Chervyakov Spectroscopy, Interaction with Radiation 07 June 2018 Pages: 849 - 852
Transverse Nernst–Ettingshausen Effect in Superlattices Upon Electron-Phonon Scattering S. R. FigarovaH. I. HuseynovV. R. Figarov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 June 2018 Pages: 853 - 858
Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon H. P. ParkhomenkoM. N. SolovanP. D. Maryanchuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 June 2018 Pages: 859 - 863
Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation D. S. PonomarevR. A. KhabibullinE. D. Mishina Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 June 2018 Pages: 864 - 869
In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties R. A. SaliiI. S. KosarevN. A. Kalyuzhnyy Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 June 2018 Pages: 870 - 876
Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells G. PozinaM. A. KaliteevskiA. Yu. Egorov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 June 2018 Pages: 877 - 880
Photoelectric Properties of ZnO Threadlike Crystals P. S. Shkumbatjuk Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 07 June 2018 Pages: 881 - 884
Dielectric Properties of Nanocrystalline Tungsten Oxide in the Temperature Range of 223–293 K S. A. KozyukhinS. A. BedinV. K. Ivanov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 07 June 2018 Pages: 885 - 890
Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure V. V. TregulovV. G. LitvinovA. V. Ermachikhin Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 07 June 2018 Pages: 891 - 896
Photoluminescence Properties of ZnO Nanorods Synthesized by Different Methods S. S. KurbanovSh. Z. UrolovT. W. Kang Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 07 June 2018 Pages: 897 - 901
Modification of Photoconductivity Spectra in ZnO–CdSe Quantum- Dot Composites upon Exposure to Additional Photoexcitation K. A. DrozdovI. V. KrylovD. R. Khokhlov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 07 June 2018 Pages: 902 - 906
Analysis of the Structure and Conductivity of Kinked Carbon Chains Obtained by Pulsed Plasma Deposition on Various Metal Substrates I. P. IvanenkoS. V. KrasnoshchekovA. V. Pavlikov Carbon Systems 07 June 2018 Pages: 907 - 913
Structure and Properties of Thin Graphite-Like Films Produced by Magnetron-Assisted Sputtering A. Ya. VinogradovS. A. GrudinkinV. G. Golubev Carbon Systems 07 June 2018 Pages: 914 - 920
Effect of Electron–Phonon Interaction on the Conductivity and Work Function of Epitaxial Graphene S. Yu. Davydov Carbon Systems 07 June 2018 Pages: 921 - 925
Study of Deep Levels in a HIT Solar Cell S. P. VikhrovN. V. VishnyakovA. S. Titov Physics of Semiconductor Devices 07 June 2018 Pages: 926 - 930
Investigation of the Characteristics of Heterojunction Solar Cells Based on Thin Single-Crystal Silicon Wafers E. I. TerukovA. S. AbramovG. G. Shelopin Physics of Semiconductor Devices 07 June 2018 Pages: 931 - 933
Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency N. I. BochkarevaY. G. Shreter Physics of Semiconductor Devices 07 June 2018 Pages: 934 - 941
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System V. V. EmtsevE. V. GushchinaV. V. Lundin Physics of Semiconductor Devices 07 June 2018 Pages: 942 - 949
On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers V. V. MamutinA. P. VasilyevV. M. Ustinov Fabrication, Treatment, and Testing of Materials and Structures 07 June 2018 Pages: 950 - 953
Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching M. I. MitrofanovI. V. LevitskiiV. P. Evtikhiev Fabrication, Treatment, and Testing of Materials and Structures 07 June 2018 Pages: 954 - 956