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Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching

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Abstract

In the Si3N4 layer, coaxial and single submicrometer GaN structures of hexagonal shape with pyramidal facets are formed by selective vapor-phase epitaxy in windows produced with a focused ion beam. It is found that coaxial hexagonal structures are formed during the growth process in ring-shaped mask windows.

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, 194021, Russia

    M. I. Mitrofanov, I. V. Levitskii, S. N. Rodin & M. A. Kaliteevski

  2. SHM R&E Center, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    M. I. Mitrofanov, I. V. Levitskii & S. N. Rodin

  3. ITMO University, St. Petersburg, 197101, Russia

    G. V. Voznyuk, E. E. Tatarinov & M. A. Kaliteevski

  4. St. Petersburg National Research Academic University, St. Petersburg, 194021, Russia

    M. A. Kaliteevski & V. P. Evtikhiev

Authors
  1. M. I. Mitrofanov
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  2. I. V. Levitskii
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  3. G. V. Voznyuk
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  4. E. E. Tatarinov
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  5. S. N. Rodin
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  6. M. A. Kaliteevski
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  7. V. P. Evtikhiev
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Corresponding author

Correspondence to M. A. Kaliteevski.

Additional information

Original Russian Text © M.I. Mitrofanov, I.V. Levitskii, G.V. Voznyuk, E.E. Tatarinov, S.N. Rodin, M.A. Kaliteevski, V.P. Evtikhiev, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 7, pp. 816–818.

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Mitrofanov, M.I., Levitskii, I.V., Voznyuk, G.V. et al. Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching. Semiconductors 52, 954–956 (2018). https://doi.org/10.1134/S1063782618070151

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  • DOI: https://doi.org/10.1134/S1063782618070151

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