Residual stresses in silicon and their evolution upon heat treatment and irradiation I. E. MatyashI. A. MinailovaL. I. Khirunenko Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 03 September 2017 Pages: 1107 - 1110
Experimental studies of the effects of atomic ordering in epitaxial Ga x In1 – x P alloys on their optical properties P. V. SeredinD. L. GoloshchapovTatiana Prutskij Electronic Properties of Semiconductors 03 September 2017 Pages: 1111 - 1118
Temperature dependence of the atomic structure and electrical activity of defects in ZnSb thermoelectric lightly doped with copper L. V. ProkofievaF. S. NasredinovA. A. Shabaldin Electronic Properties of Semiconductors 03 September 2017 Pages: 1119 - 1126
Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range A. V. BabichevN. V. KryzhanovskayaA. Yu. Egorov Electronic Properties of Semiconductors 03 September 2017 Pages: 1127 - 1132
Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon N. A. SobolevA. E. KalyadinK. F. Shtel’makh Electronic Properties of Semiconductors 03 September 2017 Pages: 1133 - 1135
Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures E. I. GoldmanS. A. LevashovG. V. Chucheva Surfaces, Interfaces, and Thin Films 03 September 2017 Pages: 1136 - 1140
On the delta-type doping of GaAs-based heterostructures with manganese compounds K. D. MoiseevV. N. NevedomskyM. Lopez-Lopez Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2017 Pages: 1141 - 1147
Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs L. V. DanilovM. P. MikhailovaG. G. Zegrya Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2017 Pages: 1148 - 1152
High-temperature annealing of macroporous silicon in an inert-gas flow E. V. AstrovaN. E. PreobrazhenskiyV. B. Voronkov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 03 September 2017 Pages: 1153 - 1163
Characteristic properties of macroporous silicon sintering in an argon atmosphere E. V. AstrovaN. E. PreobrazhenskiyV. B. Voronkov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 03 September 2017 Pages: 1164 - 1173
Derivation of an analytical expression for a physical process from an experimental curve with kinks V. N. DavydovS. V. KharitonovK. P. Melnik Physics of Semiconductor Devices 03 September 2017 Pages: 1174 - 1179
Degradation of micromorphous thin-film silicon (α-Si/μc-Si) solar modules: Evaluation of seasonal efficiency based on the data of monitoring D. A. BogdanovG. A. GorbatovskiiE. I. Terukov Physics of Semiconductor Devices 03 September 2017 Pages: 1180 - 1185
Hopping conductivity and dielectric relaxation in Schottky barriers on GaN N. I. BochkarevaV. V. VoronenkovYu. G. Shreter Physics of Semiconductor Devices 03 September 2017 Pages: 1186 - 1193
Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode V. S. YuferevM. E. LevinshteinJohn W. Palmour Physics of Semiconductor Devices 03 September 2017 Pages: 1194 - 1199
Electric-field sensor based on a double quantum dot in a microcavity A. V. TsukanovV. G. Chekmachev Physics of Semiconductor Devices 03 September 2017 Pages: 1200 - 1207
High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process A. S. Kyuregyan Physics of Semiconductor Devices 03 September 2017 Pages: 1208 - 1213
High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency A. S. Kyuregyan Physics of Semiconductor Devices 03 September 2017 Pages: 1214 - 1217
Electrical and thermal properties of photoconductive antennas based on In x Ga1 – x As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation D. S. PonomarevR. A. KhabibullinP. P. Maltsev Physics of Semiconductor Devices 03 September 2017 Pages: 1218 - 1223
Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes M. A. RoyzA. N. BaranovYu. P. Yakovlev Physics of Semiconductor Devices 03 September 2017 Pages: 1224 - 1228
High-voltage MIS-gated GaN transistors E. V. ErofeevI. V. FedinA. V. Yuryeva Physics of Semiconductor Devices 03 September 2017 Pages: 1229 - 1232
Formation of low-dimensional structures in the InSb/AlAs heterosystem D. S. AbramkinA. K. BakarovT. S. Shamirzaev Fabrication, Treatment, and Testing of Materials and Structures 03 September 2017 Pages: 1233 - 1239
Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films I. E. TyschenkoA. G. CherkovM. Voelskow Fabrication, Treatment, and Testing of Materials and Structures 03 September 2017 Pages: 1240 - 1246