1. Residual stresses in silicon and their evolution upon heat treatment and irradiation

   • I. E. Matyash
   • I. A. Minailova
   • L. I. Khirunenko

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 03 September 2017 Pages: 1107 - 1110

2. Experimental studies of the effects of atomic ordering in epitaxial Ga _x In_{1 – x} P alloys on their optical properties

   • P. V. Seredin
   • D. L. Goloshchapov
   • Tatiana Prutskij

   Electronic Properties of Semiconductors 03 September 2017 Pages: 1111 - 1118

3. Temperature dependence of the atomic structure and electrical activity of defects in ZnSb thermoelectric lightly doped with copper

   • L. V. Prokofieva
   • F. S. Nasredinov
   • A. A. Shabaldin

   Electronic Properties of Semiconductors 03 September 2017 Pages: 1119 - 1126

4. Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range

   • A. V. Babichev
   • N. V. Kryzhanovskaya
   • A. Yu. Egorov

   Electronic Properties of Semiconductors 03 September 2017 Pages: 1127 - 1132

5. Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon

   • N. A. Sobolev
   • A. E. Kalyadin
   • K. F. Shtel’makh

   Electronic Properties of Semiconductors 03 September 2017 Pages: 1133 - 1135

6. Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures

   • E. I. Goldman
   • S. A. Levashov
   • G. V. Chucheva

   Surfaces, Interfaces, and Thin Films 03 September 2017 Pages: 1136 - 1140

7. On the delta-type doping of GaAs-based heterostructures with manganese compounds

   • K. D. Moiseev
   • V. N. Nevedomsky
   • M. Lopez-Lopez

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2017 Pages: 1141 - 1147

8. Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs

   • L. V. Danilov
   • M. P. Mikhailova
   • G. G. Zegrya

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2017 Pages: 1148 - 1152

9. High-temperature annealing of macroporous silicon in an inert-gas flow

   • E. V. Astrova
   • N. E. Preobrazhenskiy
   • V. B. Voronkov

   Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 03 September 2017 Pages: 1153 - 1163

10. Characteristic properties of macroporous silicon sintering in an argon atmosphere

    • E. V. Astrova
    • N. E. Preobrazhenskiy
    • V. B. Voronkov

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 03 September 2017 Pages: 1164 - 1173

11. Derivation of an analytical expression for a physical process from an experimental curve with kinks

    • V. N. Davydov
    • S. V. Kharitonov
    • K. P. Melnik

    Physics of Semiconductor Devices 03 September 2017 Pages: 1174 - 1179

12. Degradation of micromorphous thin-film silicon (α-Si/μc-Si) solar modules: Evaluation of seasonal efficiency based on the data of monitoring

    • D. A. Bogdanov
    • G. A. Gorbatovskii
    • E. I. Terukov

    Physics of Semiconductor Devices 03 September 2017 Pages: 1180 - 1185

13. Hopping conductivity and dielectric relaxation in Schottky barriers on GaN

    • N. I. Bochkareva
    • V. V. Voronenkov
    • Yu. G. Shreter

    Physics of Semiconductor Devices 03 September 2017 Pages: 1186 - 1193

14. Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode

    • V. S. Yuferev
    • M. E. Levinshtein
    • John W. Palmour

    Physics of Semiconductor Devices 03 September 2017 Pages: 1194 - 1199

15. Electric-field sensor based on a double quantum dot in a microcavity

    • A. V. Tsukanov
    • V. G. Chekmachev

    Physics of Semiconductor Devices 03 September 2017 Pages: 1200 - 1207

16. High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process

    • A. S. Kyuregyan

    Physics of Semiconductor Devices 03 September 2017 Pages: 1208 - 1213

17. High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency

    • A. S. Kyuregyan

    Physics of Semiconductor Devices 03 September 2017 Pages: 1214 - 1217

18. Electrical and thermal properties of photoconductive antennas based on In _x Ga_{1 – x} As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation

    • D. S. Ponomarev
    • R. A. Khabibullin
    • P. P. Maltsev

    Physics of Semiconductor Devices 03 September 2017 Pages: 1218 - 1223

19. Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes

    • M. A. Royz
    • A. N. Baranov
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices 03 September 2017 Pages: 1224 - 1228

20. High-voltage MIS-gated GaN transistors

    • E. V. Erofeev
    • I. V. Fedin
    • A. V. Yuryeva

    Physics of Semiconductor Devices 03 September 2017 Pages: 1229 - 1232

21. Formation of low-dimensional structures in the InSb/AlAs heterosystem

    • D. S. Abramkin
    • A. K. Bakarov
    • T. S. Shamirzaev

    Fabrication, Treatment, and Testing of Materials and Structures 03 September 2017 Pages: 1233 - 1239

22. Specific features of the ion-beam synthesis of Ge nanocrystals in SiO₂ thin films

    • I. E. Tyschenko
    • A. G. Cherkov
    • M. Voelskow

    Fabrication, Treatment, and Testing of Materials and Structures 03 September 2017 Pages: 1240 - 1246