Negative annealing in silicon after the implantation of high-energy sodium ions V. M. Korol’A. V. ZastavnoiR. Asomoza Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 18 May 2017 Pages: 549 - 555
Ab initio calculations of phonon dispersion in CdGa2Se4 Z. A. DzhakhangirliT. G. KerimovaN. T. Mamedov Electronic Properties of Semiconductors 18 May 2017 Pages: 556 - 558
Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering M. M. MezdroginaA. Ya. VinogradovA. S. Aglikov Electronic Properties of Semiconductors 18 May 2017 Pages: 559 - 564
Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs N. N. AgeevaI. L. BronevoiA. N. Krivonosov Electronic Properties of Semiconductors 18 May 2017 Pages: 565 - 570
Optical an photoelectric properties odf ZnSe:Ti crystals Yu. A. NitsukYu. F. Vaksman Spectroscopy, Interaction with Radiation 18 May 2017 Pages: 571 - 575
Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method A. A. ZarubanovV. F. PlyusninK. S. Zhuravlev Spectroscopy, Interaction with Radiation 18 May 2017 Pages: 576 - 581
Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium A. S. VlasovL. B. KarlinaA. V. Ankudinov Surfaces, Interfaces, and Thin Films 18 May 2017 Pages: 582 - 585
Morphology, optical, and adsorption properties of copper-oxide layers deposited from complex compound solutions L. B. MatyushkinA. A. ReshetnikovaV. A. Moshnikov Surfaces, Interfaces, and Thin Films 18 May 2017 Pages: 586 - 590
Origin of discrepancies in the experimental values of the barrier height at metal–semiconductor junctions Sh. Q. AskerovL. K. AbdullayevaM. H. Hasanov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 May 2017 Pages: 591 - 593
Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field A. B. Pashkovskii Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 May 2017 Pages: 594 - 603
Injection-induced terahertz electroluminescence from silicon p–n structures A. O. Zakhar’inYu. B. VasilyevA. V. Andrianov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 May 2017 Pages: 604 - 607
Characteristics of the Schottky barriers of two-terminal thin-film Al/nano-Si film/ITO structures N. N. KononovS. G. Dorofeev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 May 2017 Pages: 608 - 616
Electronic structure of single-layer superlattices (GeC)1(SiC)1, (SnC)1(SiC)1, and (SnC)1(GeC)1 Yu. M. BasalaevE. N. Malysheva Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 May 2017 Pages: 617 - 620
Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice A. S. GrashchenkoN. A. FeoktistovS. A. Kukushkin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 May 2017 Pages: 621 - 627
Energy transfer from TPD to CdSe/CdS/ZnS colloidal nanocrystals N. S. KurochkinA. V. KatsabaP. N. Tananaev Amorphous, Vitreous, and Organic Semiconductors 18 May 2017 Pages: 628 - 631
On the photoconductivity of TlInSe2 N. D. IsmailovCh. I. AbilovM. S. Gasanova Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 18 May 2017 Pages: 632 - 635
Effect of hydrogen desorption on the mechanical properties and electron structure of diamond-like carbon nanothreads A. I. PodlivaevL. A. Openov Carbon Systems 18 May 2017 Pages: 636 - 639
Effect of intercalated hydrogen on the electron state of quasi-free graphene on a SiC substrate S. Yu. Davydov Carbon Systems 18 May 2017 Pages: 640 - 644
Laser (λ = 809 nm) power converter based on GaAs V. P. KhvostikovS. V. SorokinaN. Kh. Timoshina Physics of Semiconductor Devices 18 May 2017 Pages: 645 - 648
Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode A. I. GusevS. K. LyubutinS. N. Tsyranov Physics of Semiconductor Devices 18 May 2017 Pages: 649 - 656
Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers E. A. SenokosovV. I. ChukitaM. V. Chukichev Physics of Semiconductor Devices 18 May 2017 Pages: 657 - 662
On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates V. Ya. AleshkinN. V. BaidusA. N. Yablonskiy Physics of Semiconductor Devices 18 May 2017 Pages: 663 - 666
Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters L. B. KarlinaA. S. VlasovA. B. Smirnov Physics of Semiconductor Devices 18 May 2017 Pages: 667 - 671
InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD S. A. MintairovN. A. KalyuzhnyyA. E. Zhukov Fabrication, Treatment, and Testing of Materials and Structures 18 May 2017 Pages: 672 - 678
Ab initio studies of structural, electronic, optical, elastic and thermal properties of CuGaTe2 Pravesh SinghSheetal SharmaA. S. Verma Fabrication, Treatment, and Testing of Materials and Structures 18 May 2017 Pages: 679 - 687