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On the photoconductivity of TlInSe2

  • Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
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Abstract

The current–voltage (I–V) and photocurrent–light intensity (I pc –Φ) characteristics and the photoconductivity relaxation kinetics of TlInSe2 single crystals are investigated. Anomalously long relaxation times (τ ≈ 103 s) and some other specific features of the photoconductivity are observed, which are explained within the barrier theory of inhomogeneous semiconductors. The heights of the drift and recombination barriers are found to be, respectively, E dr ≈ 0.1 eV and E r ≈ 0.45 eV.

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Authors and Affiliations

  1. Azerbaijan Technical University, Az-1073, Baku, Azerbaijan

    N. D. Ismailov, Ch. I. Abilov & M. S. Gasanova

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  1. N. D. Ismailov
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  2. Ch. I. Abilov
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  3. M. S. Gasanova
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Correspondence to N. D. Ismailov.

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Original Russian Text © N.D. Ismailov, Ch.I. Abilov, M.S. Gasanova, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 5, pp. 663–666.

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Ismailov, N.D., Abilov, C.I. & Gasanova, M.S. On the photoconductivity of TlInSe2 . Semiconductors 51, 632–635 (2017). https://doi.org/10.1134/S1063782617050104

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  • DOI: https://doi.org/10.1134/S1063782617050104

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