Halogen diffusion on a Ga-stabilized ζ-GaAs(001)–(4 × 2) surface A. V. BakulinS. E. Kulkova Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 16 September 2016 Pages: 1131 - 1136
Low-temperature conductivity of gadolinium sulfides S. N. MustafaevaS. M. Asadov Electronic Properties of Semiconductors 16 September 2016 Pages: 1137 - 1140
Electrical parameters of polycrystalline Sm1–x Eu x S rare-earth semiconductors V. V. KaminskiiM. M. KazaninN. V. Sharenkova Electronic Properties of Semiconductors 16 September 2016 Pages: 1141 - 1144
Temperature dependence of the band gap of the single-crystal compounds In2S3 and AgIn5S8 I. V. Bodnar Electronic Properties of Semiconductors 16 September 2016 Pages: 1145 - 1150
Plasmon–phonon coupling in the infrared reflectance spectra of Bi2Se3 films N. N. NovikovaV. A. YakovlevI. V. Kucherenko Spectroscopy, Interaction with Radiation 16 September 2016 Pages: 1151 - 1155
Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures V. M. KalyginaI. M. EgorovaO. P. Tolbanov Surfaces, Interfaces, and Thin Films 16 September 2016 Pages: 1156 - 1162
Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector S. ChatbouriM. TroudiA. Souifi Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 September 2016 Pages: 1163 - 1167
Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide V. I. AltuhovI. S. KasyanenkoA. S. Sigov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 September 2016 Pages: 1168 - 1172
On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena V. N. PetrovV. G. SidorovYu. N. Makarov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 September 2016 Pages: 1173 - 1179
Optical properties of hybrid quantum-confined structures with high absorbance A. M. NadtochiyN. A. KalyuzhnyyA. E. Zhukov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 September 2016 Pages: 1180 - 1185
Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range A. G. GladyshevI. I. NovikovA. Yu. Egorov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 16 September 2016 Pages: 1186 - 1190
Photoluminescence spectra of thin films of ZnTPP–C60 and CuTPP–C60 molecular complexes M. A. ElistratovaI. B. ZakharovaO. E. Kvyatkovskii Amorphous, Vitreous, and Organic Semiconductors 16 September 2016 Pages: 1191 - 1197
Laser sintering of a TiO2 nanoporous film on a flexible substrate for application in solar cells S. P. MalyukovA. V. SayenkoI. A. Kirichenko Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 16 September 2016 Pages: 1198 - 1202
Dielectric properties of layered FeGaInS4 single crystals in an alternating electric field F. M. MammadovN. N. Niftiyev Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 16 September 2016 Pages: 1203 - 1207
Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures N. T. BagraevA. L. ChernevM. V. Dubina Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 16 September 2016 Pages: 1208 - 1215
On methods of determining the band gap of semiconductor structures with p–n junctions I. M. VikulinB. V. KorobitsynS. K. Kriskiv Physics of Semiconductor Devices 16 September 2016 Pages: 1216 - 1219
Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures V. P. KhvostikovN. A. KalyuzhnyyV. M. Andreev Physics of Semiconductor Devices 16 September 2016 Pages: 1220 - 1224
On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions D. A. VeselovI. S. ShashkinI. S. Tarasov Physics of Semiconductor Devices 16 September 2016 Pages: 1225 - 1230
Synthesis and study of thin TiO2 films doped with silver nanoparticles for the antireflection coatings and transparent contacts of photovoltaic converters L. S. LuninM. L. LuninaA. V. Blinov Physics of Semiconductor Devices 16 September 2016 Pages: 1231 - 1235
Formation of the low-resistivity compound Cu3Ge by low-temperature treatment in an atomic hydrogen flux E. V. ErofeevA. I. KazimirovV. A. Kagadei Fabrication, Treatment, and Testing of Materials and Structures 16 September 2016 Pages: 1236 - 1240
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs A. F. TsatsulnikovW. V. LundinN. A. Cherkashin Fabrication, Treatment, and Testing of Materials and Structures 16 September 2016 Pages: 1241 - 1247
Conditions of growth of high-quality relaxed Si1–x Ge x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire V. G. ShengurovV. Yu. ChalkovZ. F. Krasilnik Fabrication, Treatment, and Testing of Materials and Structures 16 September 2016 Pages: 1248 - 1253
Synthesis of ZnO-based nanostructures for heterostructure photovoltaic cells N. A. LashkovaA. I. MaximovE. I. Terukov Fabrication, Treatment, and Testing of Materials and Structures 16 September 2016 Pages: 1254 - 1260
Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates P. V. SeredinD. L. GoloshchapovI. S. Tarasov Fabrication, Treatment, and Testing of Materials and Structures 16 September 2016 Pages: 1261 - 1272