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Conditions of growth of high-quality relaxed Si1–x Ge x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire

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Abstract

The conditions of the epitaxial growth of high-quality relaxed Si1–x Ge x layers by the combined method of the sublimation molecular-beam epitaxy and vapor-phase decomposition of monogermane on a hot wire are considered. The combined growth procedure proposed provides a means for growing Si1–x Ge x layers with a thickness of up to 2 µm and larger. At reduced growth temperatures (T S = 325–350°C), the procedure allows the growth of Si1–x Ge x layers with a small surface roughness (rms ≈ 2 nm) and a low density of threading dislocations. The photoluminescence intensity of Si1–x Ge x :Er layers is significantly (more than five times) higher than the photoluminescence intensity of layers produced under standard growth conditions (T S ≈ 500°C) and possess an external quantum efficiency estimated at a level of ~0.4%.

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Authors and Affiliations

  1. Physical Technical Research Institute, Nizhny Novgorod State University, Nizhny Novgorod, 603950, Russia

    V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov & D. O. Filatov

  2. Nizhny Novgorod State University, Nizhny Novgorod, 603950, Russia

    S. A. Matveev, A. V. Nezhdanov, A. I. Mashin, M. V. Stepikhova & Z. F. Krasilnik

  3. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod oblast, 607680, Russia

    M. V. Stepikhova & Z. F. Krasilnik

Authors
  1. V. G. Shengurov
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  2. V. Yu. Chalkov
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  3. S. A. Denisov
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  4. S. A. Matveev
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  5. A. V. Nezhdanov
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  6. A. I. Mashin
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  7. D. O. Filatov
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  8. M. V. Stepikhova
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  9. Z. F. Krasilnik
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Corresponding author

Correspondence to S. A. Matveev.

Additional information

Original Russian Text © V.G. Shengurov, V.Yu. Chalkov, S.A. Denisov, S.A. Matveev, A.V. Nezhdanov, A.I. Mashin, D.O. Filatov, M.V. Stepikhova, Z.F. Krasilnik, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 9, pp. 1270–1275.

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Shengurov, V.G., Chalkov, V.Y., Denisov, S.A. et al. Conditions of growth of high-quality relaxed Si1–x Ge x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire. Semiconductors 50, 1248–1253 (2016). https://doi.org/10.1134/S1063782616090220

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  • DOI: https://doi.org/10.1134/S1063782616090220

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