Summary of the 12th Russian Conference on Semiconductor Physics (Ershovo, Zvenigorod, Moscow, September 20–25, 2015) D. R. Khokhlov Electronic Properties of Semiconductors 17 June 2016 Pages: 705 - 708
Matrix-type effect on the magnetotransport properties of Ni–AlO and Ni–NbO composite systems O. V. StogneiA. J. MalikiA. V. Sitnikov Electronic Properties of Semiconductors 17 June 2016 Pages: 709 - 714
Optical properties of In2Se3 thin films I. V. Bodnar Electronic Properties of Semiconductors 17 June 2016 Pages: 715 - 718
Anomalous thermoelectric power in Hg3In2Te6 crystals O. G. Grushka Electronic Properties of Semiconductors 17 June 2016 Pages: 719 - 721
Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga) N. A. PoklonskiS. A. VyrkoA. G. Zabrodskii Electronic Properties of Semiconductors 17 June 2016 Pages: 722 - 734
Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment G. P. GaidarP. I. Baranskii Electronic Properties of Semiconductors 17 June 2016 Pages: 735 - 740
On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation L. V. ProkofievaP. P. KonstantinovA. A. Shabaldin Electronic Properties of Semiconductors 17 June 2016 Pages: 741 - 750
Radiation-induced bistable centers with deep levels in silicon n +–p structures S. B. LastovskiiV. P. MarkevichV. P. Krylov Electronic Properties of Semiconductors 17 June 2016 Pages: 751 - 755
On the local injection of emitted electrons into micrograins on the surface of AIII–BV semiconductors N. D. ZhukovE. G. GlukhovskoiA. A. Khazanov Surfaces, Interfaces, and Thin Films 17 June 2016 Pages: 756 - 760
On the ohmicity of Schottky contacts A. V. SachenkoA. E. BelyaevR. V. Konakova Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 June 2016 Pages: 761 - 768
Absorption of electromagnetic radiation in a quantum wire with an anisotropic parabolic potential in a transverse magnetic field V. V. KarpuninV. A. Margulis Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 June 2016 Pages: 769 - 774
Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium E. V. MaraevaV. A. MoshnikovYu. M. Tairov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 June 2016 Pages: 775 - 777
Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers L. V. DanilovA. A. PetukhovYu. P. Yakovlev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 June 2016 Pages: 778 - 784
Generation of transverse direct current in a superlattice under a bichromatic high-frequency electric and constant magnetic fields D. V. Zav’yalovV. I. KonchenkovS. V. Kryuchkov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 June 2016 Pages: 785 - 790
Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen E. V. IvanovaA. A. SitnikovaM. V. Zamoryanskaya Amorphous, Vitreous, and Organic Semiconductors 17 June 2016 Pages: 791 - 794
Inter atomic force constants of binary and ternary tetrahedral semiconductors Suresh PalR. K. TiwariA. S. Verma Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 17 June 2016 Pages: 795 - 800
Substitutional impurity in single-layer graphene: The Koster–Slater and Anderson models S. Yu. Davydov Carbon Systems 17 June 2016 Pages: 801 - 809
Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes S. A. ZuevG. V. KilessaS. V. Pokrova Physics of Semiconductor Devices 17 June 2016 Pages: 810 - 814
Experimental determination of the derivative of the current–voltage characteristic of a nonlinear semiconductor structure using modulation Fourier analysis N. D. KuzmichevM. A. VasyutinD. A. Shilkin Physics of Semiconductor Devices 17 June 2016 Pages: 815 - 818
Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass S. A. IvanovN. V. NikonorovI. S. Tarasov Physics of Semiconductor Devices 17 June 2016 Pages: 819 - 823
Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET A. I. MikhaylovA. V. AfanasyevA. Schöner Physics of Semiconductor Devices 17 June 2016 Pages: 824 - 827
Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect I. M. GadzhiyevM. S. BuyaloE. L. Portnoi Physics of Semiconductor Devices 17 June 2016 Pages: 828 - 831
On the photon annealing of silicon-implanted gallium-nitride layers B. I. SeleznevG. Ya. MoskalevD. G. Fedorov Fabrication, Treatment, and Testing of Materials and Structures 17 June 2016 Pages: 832 - 838
The modification of BaCe0.5Zr0.3Y0.2O3–δ with copper oxide: Effect on the structural and transport properties Yu. G. LyagaevaG. K. VdovinA. K. Demin Fabrication, Treatment, and Testing of Materials and Structures 17 June 2016 Pages: 839 - 843
Synthesis of metal and semiconductor nanoparticles in a flow of immiscible liquids L. B. MatyushkinO. A. RyzhovV. A. Moshnikov Fabrication, Treatment, and Testing of Materials and Structures 17 June 2016 Pages: 844 - 847