Laser interferometric method for determining the carrier diffusion length in semiconductors V. V. ManukhovA. B. FedortsovA. S. Ivanov Electronic Properties of Semiconductors 03 September 2015 Pages: 1119 - 1124
Negative differential conductivity in n-Si structures with contacts asymmetric in area A. M. Musaev Electronic Properties of Semiconductors 03 September 2015 Pages: 1125 - 1128
On the tensoresistance of n-Ge and n-Si crystals with radiation-induced defects G. P. Gaidar Electronic Properties of Semiconductors 03 September 2015 Pages: 1129 - 1133
Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory N. K. MorozovaV. G. GalstyanV. E. Mashchenko Electronic Properties of Semiconductors 03 September 2015 Pages: 1134 - 1139
Effect of plastic deformation on the magnetic properties and dislocation luminescence of isotopically enriched silicon 29Si:B O. V. KoplakE. A. ShteynmanR. B. Morgunov Electronic Properties of Semiconductors 03 September 2015 Pages: 1140 - 1144
On the band gap of Cu2ZnSn(S x Se1–x )4 alloys I. V. Bodnar Electronic Properties of Semiconductors 03 September 2015 Pages: 1145 - 1148
Specific features of the optical and photoelectric properties of nanocrystalline indium oxide E. A. ForshP. A. ForshP. K. Kashkarov Electronic Properties of Semiconductors 03 September 2015 Pages: 1149 - 1153
Low-temperature galvanomagnetic studies of nominally undoped germanium subjected to intrinsic photoexcitation V. F. Bannaya Electronic Properties of Semiconductors 03 September 2015 Pages: 1154 - 1159
Electrical breakdown in nominally undoped n-Ge and p-Ge samples under interband photoexcitation V. F. Bannaya Electronic Properties of Semiconductors 03 September 2015 Pages: 1160 - 1162
Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped p-4H-SiC (CVD) V. V. KozlovskiA. A. LebedevN. V. Seredova Electronic Properties of Semiconductors 03 September 2015 Pages: 1163 - 1165
Features of the electrical conductivity of TlInSe2 under photoexcitation and X-ray excitation R. S. MadatovA. I. NajafovI. M. Movsumova Electronic Properties of Semiconductors 03 September 2015 Pages: 1166 - 1169
Temperature dependence of the carrier lifetime in narrow-gap Cd x Hg1–x Te solid solutions: Radiative recombination N. L. BazhenovK. D. MynbaevG. G. Zegrya Electronic Properties of Semiconductors 03 September 2015 Pages: 1170 - 1175
An origin of orange (2 eV) photoluminescence in SiO2 films implanted with high Si+-ion doses I. E. Tyschenko Spectroscopy, Interaction with Radiation 03 September 2015 Pages: 1176 - 1180
On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN O. S. MedvedevO. F. VyvenkoA. S. Bondarenko Spectroscopy, Interaction with Radiation 03 September 2015 Pages: 1181 - 1186
On a chaotic potential at the surface of a compensated semiconductor under conditions of the self-assembly of electrically active defects V. B. BondarenkoA. V. Filimonov Surfaces, Interfaces, and Thin Films 03 September 2015 Pages: 1187 - 1190
Controlled exciton transfer between quantum dots with acoustic phonons taken into account P. A. Golovinski Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2015 Pages: 1191 - 1196
On the cascade capture of electrons at donors in GaAs quantum wells V. Ya. Aleshkin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2015 Pages: 1197 - 1201
Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy L. P. AvakyantsP. Yu. BokovA. V. Chervyakov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2015 Pages: 1202 - 1206
Photoluminescence properties of modulation-doped In x Al1–x As/In y Ga1–y As/In x Al1–x As structures with strained inas and gaas nanoinserts in the quantum well G. B. GalievI. S. Vasil’evskiiP. P. Maltsev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2015 Pages: 1207 - 1217
Photoluminescence of heterostructures containing an In x Ga1–x As quantum well with a high in content at different excitation powers D. V. LavrukhinR. A. KhabibullinP. P. Maltsev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2015 Pages: 1218 - 1221
Defect-related luminescence in silicon p +–n junctions R. V. KuzminN. T. BagraevA. M. Malyarenko Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 03 September 2015 Pages: 1222 - 1225
Effect of hydrogen on the electrical characteristics of structural elements of the Pt/WO x /6H-SiC V. V. ZuevR. I. RomanovV. N. Nevolin Physics of Semiconductor Devices 03 September 2015 Pages: 1226 - 1236
Effect of catalytic surface modification on the gas sensitivity of SnO2 + 3% SiO2 films S. I. RembezaE. S. RembezaV. M. K. Al Tameemi Physics of Semiconductor Devices 03 September 2015 Pages: 1237 - 1241
Characterization of field-emission cathodes based on graphene films on SiC R. V. KonakovaO. B. OkhrimenkoO. B. Spiridonov Physics of Semiconductor Devices 03 September 2015 Pages: 1242 - 1245
Photodetectors based on single-walled carbon nanotubes and thiamonomethinecyanine J-aggregates on flexible substrates I. V. FedorovA. V. Emel’yanovI. I. Bobrinetskiy Physics of Semiconductor Devices 03 September 2015 Pages: 1246 - 1251