Abstract
A variation in the tensoresistance of n-Ge:Sb and n-Si:As crystals as a result of irradiation with γ-ray photons (60Co source) at fixed temperatures under conditions of the application of uniaxial elastic stress (0 ≤ X ≤ 1.2 GPa) along the main crystallographic direction is studied. It is found that, in the case of the deformation axis being in an asymmetric position relative to the isoenergetic ellipsoids, there is a maximum for the dependences of the tensoresistance ρ X /ρ0 = f(X); an explanation as to the nature of the observed effect is suggested. Tensoresistance is revealed in unirradiated n-Si:As crystals in the case of the deformation axis being in a symmetric position relative to all isoenergetic ellipsoids; the value of the tensoresistance as a result of irradiation with γ-ray photons decreases. It is shown that this effect can be attributed to a variation in the mobility of electrons in the conduction band as a result of an increase in the transverse effective mass and the appearance of new deep-level centers under the effect of irradiation, respectively.
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Original Russian Text © G.P. Gaidar, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 9, pp. 1164–1168.
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Gaidar, G.P. On the tensoresistance of n-Ge and n-Si crystals with radiation-induced defects. Semiconductors 49, 1129–1133 (2015). https://doi.org/10.1134/S1063782615090110
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DOI: https://doi.org/10.1134/S1063782615090110