Electrical and optical properties of Mn-doped Hg3In2Te6 crystals O. G. GrushkaS. M. ChupyraD. P. Koziarskyi Electronic Properties of Semiconductors 05 September 2013 Pages: 1141 - 1144
Features of conduction mechanisms in n-HfNiSn semiconductor heavily doped with a Rh acceptor impurity V. A. RomakaP. RoglA. M. Horyn Electronic Properties of Semiconductors 05 September 2013 Pages: 1145 - 1152
Excitonic structure formation in the photoconductivity spectra of CdS crystals at modulated excitation A. S. BatyrevR. A. BisengalievM. O. Tagirov Electronic Properties of Semiconductors 05 September 2013 Pages: 1153 - 1156
Quantum self-consistent calculation of the differential capacitance of a semiconductor film D. E. TsurikovA. M. Yafyasov Surfaces, Interfaces, and Thin Films 05 September 2013 Pages: 1157 - 1163
Electrical properties of zinc-sulfide films produced by close-spaced vacuum sublimation D. I. Kurbatov Surfaces, Interfaces, and Thin Films 05 September 2013 Pages: 1164 - 1169
Local triboelectrification of an n-GaAs surface using the tip of an atomic-force microscope P. N. BrunkovV. V. GoncharovS. G. Konnikov Surfaces, Interfaces, and Thin Films 05 September 2013 Pages: 1170 - 1173
Electrical and photoelectric properties of anisotype n-TiN/p-Si heterojunctions M. M. SolovanV. V. BrusP. D. Maryanchuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2013 Pages: 1174 - 1179
Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density A. V. SachenkoA. E. BelyaevV. N. Sheremet Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2013 Pages: 1180 - 1184
Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier V. N. NevedomskiyN. A. BertB. R. Semyagin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2013 Pages: 1185 - 1192
Emission intensity in the visible and IR spectral ranges from Si-based structures formed by direct bonding with simultaneous doping with erbium (Er) and europium (Eu) M. M. MezdroginaL. S. KostinaR. V. Kuzmin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2013 Pages: 1193 - 1197
Atomic-force microscopy and photoluminescence of nanostructured CdTe V. BabentsovF. SizovZ. Tsybrii Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2013 Pages: 1198 - 1202
Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths R. A. KhabibullinG. B. GalievP. P. Maltsev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2013 Pages: 1203 - 1208
Photocurrent in a quantum channel with an impurity V. A. MargulisM. A. PyataevS. N. Ulyanov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2013 Pages: 1209 - 1214
Suppression of electron magnetotunneling between parallel two-dimensional GaAs/InAs electron systems by the correlation interaction Yu. N. KhaninE. E. VdovinM. Henini Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2013 Pages: 1215 - 1218
Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well B. N. ZvonkovS. M. NekorkinN. V. Dikareva Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2013 Pages: 1219 - 1223
Analytical one-dimensional current-voltage model for FD SOI MOSFETs including the effect of substrate depletion Rahul PandeyAloke K. Dutta Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2013 Pages: 1224 - 1231
Optical orientation of electrons in compensated semiconductors I. A. KokurinP. V. PetrovN. S. Averkiev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2013 Pages: 1232 - 1240
Anisotropy of the electron g factor in quantum wells based on cubic semiconductors P. S. Alekseev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2013 Pages: 1241 - 1245
Effect of electromagnetic radiation on an array of weakly interacting carbon nanotubes in the presence of nanosecond pulses N. R. SadykovN. A. ScorkinE. A. Akhljustina Carbon Systems 05 September 2013 Pages: 1246 - 1251
Analysis of light-induced degradation mechanisms in α-Si:H/μc-Si:H solar photovoltaics V. M. EmelyanovA. S. AbramovM. Z. Shvarts Physics of Semiconductor Devices 05 September 2013 Pages: 1252 - 1257
High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier A. A. PetukhovB. E. ZhurtanovYu. P. Yakovlev Physics of Semiconductor Devices 05 September 2013 Pages: 1258 - 1263
Properties of silicon films grown under different pressures in a plasma-forming system D. M. MitinA. A. Serdobintsev Fabrication, Treatment, and Testing of Materials and Structures 05 September 2013 Pages: 1264 - 1266
Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate D. B. ShustovA. A. LebedevM. V. Zamoryanskaya Fabrication, Treatment, and Testing of Materials and Structures 05 September 2013 Pages: 1267 - 1270
Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties M. V. KhenkinA. V. EmelyanovP. Roca i Cabarrocas Fabrication, Treatment, and Testing of Materials and Structures 05 September 2013 Pages: 1271 - 1274
Structural transformation of macroporous silicon anodes as a result of cyclic lithiation processes G. V. LiT. L. KulovaA. M. Skundin Fabrication, Treatment, and Testing of Materials and Structures 05 September 2013 Pages: 1275 - 1281