On the resonant level of chromium in the rhombohedral and cubic phases of Pb1 − x − y Ge x Cr y Te alloys E. P. SkipetrovN. A. PichuginV. E. Slyn’ko Electronic Properties of Semiconductors 10 June 2013 Pages: 729 - 735
Energy states of a Cr2+ ion in ZnSe crystals Yu. A. Nitsuk Electronic Properties of Semiconductors 10 June 2013 Pages: 736 - 739
Effect of fluorine, nitrogen, and carbon impurities on the electronic and magnetic properties of WO3 I. R. SheinA. L. Ivanovskii Electronic Properties of Semiconductors 10 June 2013 Pages: 740 - 744
Method for determination of the degree of compensation for electrically active impurities in multivalley semiconductors P. I. BaranskiiG. P. Gaidar Electronic Properties of Semiconductors 10 June 2013 Pages: 745 - 748
Fundamental spectra of optical functions for indium bromide in the energy range of 2–30 eV at 4.2 K V. V. SobolevV. Val. SobolevD. V. Anisimov Spectroscopy, Interaction with Radiation 10 June 2013 Pages: 749 - 754
Role of intervalley scattering in the radiative recombination in Pb1 − x Eu x Te alloys (0 ≤ x ≤ 1) D. A. PashkeevI. I. Zasavitskiy Spectroscopy, Interaction with Radiation 10 June 2013 Pages: 755 - 760
Optical phonons in CdGa2S4x Se4(1 − x) alloys T. G. KerimovaN. A. AbdullaevN. T. Mamedov Spectroscopy, Interaction with Radiation 10 June 2013 Pages: 761 - 766
On the photoinduced effect in undoped a-Si:H films I. A. KurovaN. N. Ormont Surfaces, Interfaces, and Thin Films 10 June 2013 Pages: 767 - 770
Electrical properties of silicon schottky diodes containing metal films of various compositions I. G. Pashaev Surfaces, Interfaces, and Thin Films 10 June 2013 Pages: 771 - 774
Effect of the stoichiometric composition of the Si(111)\(\sqrt {21} \) × \(\sqrt {21} \)-(Au, Ag) surface phase on substrate conductivity D. A. TsukanovM. V. RyzhkovaE. A. Borisenko Surfaces, Interfaces, and Thin Films 10 June 2013 Pages: 775 - 781
Study of the I–V characteristics of nanostructured Pd films on a Si substrate after vacuum annealing S. V. TomilinA. S. YanovskyG. R. Mikaelyan Surfaces, Interfaces, and Thin Films 10 June 2013 Pages: 782 - 786
Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering Samina BidmeshkipourNasser Shahtahmasebi Surfaces, Interfaces, and Thin Films 10 June 2013 Pages: 787 - 790
On an exciton with a spatially separated electron and hole in quasi-zero-dimensional semiconductor nanosystems S. I. Pokutnyi Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 June 2013 Pages: 791 - 798
Charge transport mechanisms in anisotype n-TiO2/p-Si heterostructures A. I. MostovyiV. V. BrusP. D. Maryanchuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 June 2013 Pages: 799 - 803
Energy relaxation of nonequilibrium electrons in a nanotube formed by a rolled-up quantum well S. M. Seyid-Rzayeva Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 June 2013 Pages: 804 - 807
Photovoltaic properties of GaAs:Be nanowire arrays A. D. BouravleuvD. V. BeznasyukG. Cirlin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 June 2013 Pages: 808 - 811
Comparative characteristics of the Raman scattering spectra of graphene films on conductive and semi-insulating 6H-SiC substrates R. V. KonakovaO. F. KolomysO. B. Spiridonov Carbon Systems 10 June 2013 Pages: 812 - 814
Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs S. ÇörekçiM. K. ÖztürkE. Özbay Physics of Semiconductor Devices 10 June 2013 Pages: 820 - 824
Injection photodiode based on an n-CdS/p-CdTe heterostructure Sh. A. MirsagatovR. R. KabulovM. A. Makhmudov Physics of Semiconductor Devices 10 June 2013 Pages: 825 - 830
Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 μm) A. N. ImenkovV. V. SherstnevYu. P. Yakovlev Physics of Semiconductor Devices 10 June 2013 Pages: 831 - 834
MOS solar cells with oxides deposited by sol-gel spin-coating techniques Chia-Hong HuangChung-Cheng ChangJung-Hui Tsai Physics of Semiconductor Devices 10 June 2013 Pages: 835 - 837
Open-circuit voltage of an illuminated nonideal heterojunction V. A. BorschakV. A. SmyntynaN. P. Zatovskaya Physics of Semiconductor Devices 10 June 2013 Pages: 838 - 843
Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers S. A. BlokhinM. A. BobrovV. M. Ustinov Physics of Semiconductor Devices 10 June 2013 Pages: 844 - 848
DLTS Study of plastically deformed copper-doped n-type germanium S. A. ShevchenkoA. I. Kolyubakin Fabrication, Treatment, and Testing of Materials and Structures 10 June 2013 Pages: 849 - 855
Phase transformations during the Ag-In plating and bonding of vertical diode elements of multijunction solar cells N. P. KlochkoG. S. KhrypunovV. A. Nikitin Fabrication, Treatment, and Testing of Materials and Structures 10 June 2013 Pages: 856 - 864
Analysis of the growth dependences of silicon-on-sapphire heteroepitaxy D. A. PavlovP. A. ShilyaevM. D. Pegasina Fabrication, Treatment, and Testing of Materials and Structures 10 June 2013 Pages: 865 - 869
Effect of ion treatment on the properties of In2O3:Sn films P. N. KrylovR. M. ZakirovaF. Z. Gilmutdinov Fabrication, Treatment, and Testing of Materials and Structures 10 June 2013 Pages: 870 - 874