1. Structural and electronic properties of Si_{1 − x} Ge _x binary semiconducting alloys under the effect of temperature and pressure

   • A. R. Degheidy
   • E. B. Elkenany

   Electronic Properties of Semiconductors 12 October 2013 Pages: 1283 - 1291

2. Numerical modeling of the polarization current of geminate pairs in disordered polymers with traps

   • N. A. Korolev
   • V. R. Nikitenko
   • A. P. Tyutnev

   Electronic Properties of Semiconductors 12 October 2013 Pages: 1292 - 1297

3. Obtaining of SmS based semiconducting material and investigation of its electrical properties

   • V. V. Kaminskii
   • Shinji Hirai
   • N. V. Sharenkova

   Electronic Properties of Semiconductors 12 October 2013 Pages: 1298 - 1300

4. Effect of impurities on the color of polycrystalline zinc selenide

   • A. S. Sherstobitova
   • A. D. Yaskov

   Electronic Properties of Semiconductors 12 October 2013 Pages: 1301 - 1302

5. Development of new CdTe based hybrid semiconducting layers produced in one step by electro-codeposition

   • C. Mitzithra
   • E. Chountoulesi
   • Z. Loizos

   Surfaces, Interfaces, and Thin Films 12 October 2013 Pages: 1303 - 1307

6. The analysis of leakage current in MIS Au/SiO₂/n-GaAs at room temperature

   • H. Altuntas
   • S. Ozcelik

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 October 2013 Pages: 1308 - 1311

7. Coupled plasma waves in a system of two two-dimensional superlattices in the presence of a quantizing electric field

   • S. Yu. Glazov
   • E. S. Kubrakova
   • N. E. Mescheryakova

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 October 2013 Pages: 1312 - 1315

8. Synchrotron study of the formation of nanoclusters in Al₂O₃/SiO _x /Al₂O₃/SiO _x /…/Si(100) multilayer nanostructures

   • S. Yu. Turishchev
   • V. A. Terekhov
   • E. P. Domashevskaya

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 October 2013 Pages: 1316 - 1323

9. Ultra-low density InAs quantum dots

   • V. G. Dubrovskii
   • G. E. Cirlin
   • N. Akopyan

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 October 2013 Pages: 1324 - 1327

10. Characterization of defects in colloidal CdSe nanocrystals by the modified thermostimulated luminescence technique

    • A. V. Katsaba
    • V. V. Fedyanin
    • P. N. Brunkov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 October 2013 Pages: 1328 - 1332

11. Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy

    • B. A. Andreev
    • N. A. Sobolev
    • E. I. Shek

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 October 2013 Pages: 1333 - 1335

12. The role of electron-electron interaction in the process of charge-carrier capture in deep quantum wells

    • L. V. Danilov
    • G. G. Zegrya

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 October 2013 Pages: 1336 - 1345

13. Composite system based on CdSe/ZnS quantum dots and GaAs nanowires

    • A. I. Khrebtov
    • V. G. Talalaev
    • G. E. Cirlin

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 October 2013 Pages: 1346 - 1350

14. Study of applicability of Boltzmann-statistics and two mobility models for organic semiconductors

    • Chen-Xin Zhou
    • Jiu-Xun Sun
    • Shuai Zhou

    Amorphous, Vitreous, and Organic Semiconductors 12 October 2013 Pages: 1351 - 1357

15. Study of the electronic properties of hydrogenated amorphous silicon films by femtosecond spectroscopy

    • M. G. Sevastyanov
    • V. S. Lobkov
    • A. V. Kukin

    Amorphous, Vitreous, and Organic Semiconductors 12 October 2013 Pages: 1358 - 1361

16. Study of the interaction mechanisms between absorbed NO₂ and por-Si/SnO _x nanocomposite layers

    • V. V. Bolotov
    • V. E. Kan
    • V. E. Roslikov

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 12 October 2013 Pages: 1362 - 1366

17. Optical constants of silicon nanoparticle thin films grown by laser electrodispersion

    • O. S. Yeltsina
    • D. A. Andronikov
    • S. A. Gurevich

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 12 October 2013 Pages: 1367 - 1371

18. Photoelectric converters with graded-gap layers based on ZnSe

    • Yu. N. Bobrenko
    • S. Yu. Pavelets
    • N. V. Yaroshenko

    Physics Semiconductor Devices 12 October 2013 Pages: 1372 - 1375

19. Method for studying the light-induced degradation of α-Si:H/μc-Si:H tandem photovoltaic converters under increased illuminance

    • O. I. Chesta
    • G. M. Ablayev
    • M. Z. Shvarts

    Physics of Semiconductor Devices 12 October 2013 Pages: 1376 - 1381

20. Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

    • I. A. Prudaev
    • I. Yu. Golygin
    • O. P. Tolbanov

    Physics of Semiconductor Devices 12 October 2013 Pages: 1382 - 1386

21. Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region

    • N. V. Kryzhanovskaya
    • A. E. Zhukov
    • D. Livshits

    Physics of Semiconductor Devices 12 October 2013 Pages: 1387 - 1390

22. Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP spacer at base-collector junction

    • Jung-Hui Tsai
    • Ching-Sung Lee
    • Wen-Chau Liu

    Physics of Semiconductor Devices 12 October 2013 Pages: 1391 - 1396

23. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

    • V. V. Korenev
    • A. V. Savelyev
    • M. V. Maximov

    Physics of Semiconductor Devices 12 October 2013 Pages: 1397 - 1404

24. Synthesis and determination of the structural and optical characteristics of cBN micropowder with Eu³⁺ ions

    • S. V. Leonchik
    • A. V. Karotki

    Fabrication, Treatment, and Testing of Materials and Structures 12 October 2013 Pages: 1405 - 1411

25. Optical properties of ITO films obtained by high-frequency magnetron sputtering with accompanying ion treatment

    • P. N. Krylov
    • R. M. Zakirova
    • I. V. Fedotova

    Fabrication, Treatment, and Testing of Materials and Structures 12 October 2013 Pages: 1412 - 1415

26. Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals

    • N. V. Sibirev
    • A. D. Bouravleuv
    • G. E. Cirlin

    Fabrication, Treatment, and Testing of Materials and Structures 12 October 2013 Pages: 1416 - 1421

27. Models of the formation of oxide phases in nanostructured materials based on lead chalcogenides subjected to treatment in oxygen and iodine vapors

    • E. V. Maraeva
    • V. A. Moshnikov
    • Yu. M. Tairov

    Fabrication, Treatment, and Testing of Materials and Structures 12 October 2013 Pages: 1422 - 1425

28. Ge-Te-Se and Ge-Te-Se-S alloys as new materials for acousto-optic devices of the near-, mid-, and far-infrared spectral regions

    • L. A. Kulakova
    • B. T. Melekh
    • A. P. Danilov

    Fabrication, Treatment, and Testing of Materials and Structures 12 October 2013 Pages: 1426 - 1431