Systematic features of the variation in the crystal-chemical, electrical, and surface physicochemical properties of A X B8 − X materials on the energy of the inverse adsorption piezoelectric effect O. A. Fedyaeva Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 05 September 2012 Pages: 1097 - 1101
Investigation of the promising thermoelectric compound CuAlO2 by the method of nuclear quadrupole resonance in Cu V. L. MatukhinI. H. KhabibullinE. I. Terukov Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 05 September 2012 Pages: 1102 - 1105
Features of the conduction mechanisms of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity V. A. RomakaP. RoglA. M. Horyn Electronic Properties of Semiconductors 05 September 2012 Pages: 1106 - 1113
Conductivity of Se95As5 chalcogenide glassy semiconductor layers containing the EuF3 rare-earth impurity in high electric fields A. I. IsayevS. I. MekhtievaV. Z. Zeynalov Electronic Properties of Semiconductors 05 September 2012 Pages: 1114 - 1118
Effect of parabenzoquinone adsorption on the magnetic properties of nanostructured silicon I. M. AntropovA. S. SemisalovaS. N. Kozlov Electronic Properties of Semiconductors 05 September 2012 Pages: 1119 - 1121
On the band gap in (In2S3) x (CuIn5S8)1 − x alloy single crystals I. V. BodnarV. V. Shatalova Electronic Properties of Semiconductors 05 September 2012 Pages: 1122 - 1125
Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor Chun-Nan ChenSheng-Hsiung ChangYiming Li Spectroscopy, Interaction with Radiation 05 September 2012 Pages: 1126 - 1134
Terahertz emission upon the interband excitation of GaN layers A. O. Zakhar’inA. V. BobylevA. V. Andrianov Spectroscopy, Interaction with Radiation 05 September 2012 Pages: 1135 - 1139
Raman scattering in the Bi2(Te0.9Se0.1)3 solid solution films N. A. AbdullaevN. M. AbdullaevS. A. Nemov Spectroscopy, Interaction with Radiation 05 September 2012 Pages: 1140 - 1144
Effect of annealing on the spectra of nuclear quadrupole resonance in gallium-indium selenides and characteristics of structures based on these materials Z. D. KovalyukO. N. SydorA. G. Khandozhko Spectroscopy, Interaction with Radiation 05 September 2012 Pages: 1145 - 1151
Electrical properties of anisotype heterojunctions n-CdZnO/p-CdTe V. V. BrusM. I. IlashchukK. S. Ulyanytsky Surfaces, Interfaces, and Thin Films 05 September 2012 Pages: 1152 - 1157
Refined model for the current-voltage characteristics of quantum-well infrared photodetectors V. B. Kulikov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2012 Pages: 1158 - 1162
Rashba spin splitting and exchange enhancement of the g factor in InAs/AlSb heterostructures with a two-dimensional electron gas S. S. KrishtopenkoK. P. KalininM. Goiran Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2012 Pages: 1163 - 1170
Nature of the electronic component of the thermal phase transition in VO2 films A. V. IlinskiyO. E. KvashenkinaE. B. Shadrin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2012 Pages: 1171 - 1185
On the effect of the spontaneous polarization of a SiC substrate on a buffer layer and quasi-free single-sheet graphene S. Yu. Davydov Carbon Systems 05 September 2012 Pages: 1186 - 1189
Electrical and gas-sensitive properties of a SnO2-based nanocomposite with multiwalled carbon nanotubes S. I. RembezaYu. V. ShmatovaN. N. Kosheleva Carbon Systems 05 September 2012 Pages: 1190 - 1193
n-Si bifacial concentrator solar cell G. G. UntilaT. N. KostM. Z. Shvarts Physics of Semiconductor Devices 05 September 2012 Pages: 1194 - 1200
Overheating of an optically triggered SiC thyristor during switch-on and turn-on spread M. E. LevinshteinT. T. MnatsakanovJ. W. Palmour Physics of Semiconductor Devices 05 September 2012 Pages: 1201 - 1206
Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm) I. S. ShashkinD. A. VinokurovI. S. Tarasov Physics of Semiconductor Devices 05 September 2012 Pages: 1207 - 1210
Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm) I. S. ShashkinD. A. VinokurovI. S. Tarasov Physics of Semiconductor Devices 05 September 2012 Pages: 1211 - 1215
Formation technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistors K. Yu. OsipovL. E. Velikovskiy Fabrication, Treatment, and Testing of Materials and Structures 05 September 2012 Pages: 1216 - 1220
Transformation of a SiC/por-SiC/TiO2 structure during rapid thermal annealing R. V. KonakovaO. F. KolomysL. G. Linets Fabrication, Treatment, and Testing of Materials and Structures 05 September 2012 Pages: 1221 - 1224