Optical monitoring of technological parameters during molecular-beam epitaxy P. V. VolkovA. V. GoryunovV. D. Kuzmin XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 06 December 2012 Pages: 1471 - 1475
Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum S. V. KhazanovaN. V. Baidus’I. A. Bobrov XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 06 December 2012 Pages: 1476 - 1480
Method for taking into account the shift parameter in the deconvolution of the depth composition distribution of semiconductor structures from SIMS depth profiles P. A. YuninYu. N. DrozdovD. V. Yurasov XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 06 December 2012 Pages: 1481 - 1486
Generation of frequency-tunable far-infrared and terahertz radiation by optical nutations at intraband transitions in asymmetric semiconductor nanoheterostructures V. A. Kukushkin XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 06 December 2012 Pages: 1487 - 1492
Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity B. N. ZvonkovO. V. VikhrovaA. V. Kudrin XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 06 December 2012 Pages: 1493 - 1496
Determination of the electron concentration and mobility in the vicinity of a quantum well and δ-doped layer in InGaAs/GaAs heterostructures S. V. TikhovN. V. BaidusS. V. Khazanova XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 06 December 2012 Pages: 1497 - 1501
Spin properties of trions in a dense quasi-2D electron gas V. P. KochereshkoL. BesombesJ. Kossut XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 06 December 2012 Pages: 1502 - 1505
Effect of He+ ion irradiation on the photosensitivity spectra of In(Ga)As/GaAs quantum well and quantum dot heterostructures A. P. GorshkovI. A. KarpovichN. S. Volkova XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 06 December 2012 Pages: 1506 - 1509
High-temperature ferromagnetism of Si1 − x Mn x films fabricated by laser deposition using the droplet velocity separation technique S. N. NikolaevV. V. RylkovV. Ya. Panchenko XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 06 December 2012 Pages: 1510 - 1517
GaMnSb/InGaAs/GaAs heterostructure leds with a ferromagnetic injector layer M. V. DorokhinE. I. MalyshevaA. V. Kudrin XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 06 December 2012 Pages: 1518 - 1523
Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures S. V. TikhovN. V. BaidusV. E. Degtyarev XVI Symposium “nanophysics and nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 06 December 2012 Pages: 1524 - 1528
Photoinduced and equilibrium optical absorption in Ge/Si quantum dots L. E. VorobjevD. A. FirsovP. Werner XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 06 December 2012 Pages: 1529 - 1533
New system of self-assembled GaSb/GaP quantum dots D. S. AbramkinM. A. PutyatoT. S. Shamirzaev XVI Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March 12–16, 2012 06 December 2012 Pages: 1534 - 1538
Comparative investigation of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors Jung-Hui TsaiChia-Hong HuangYou-Ren Wu Physics of Semiconductor Devices 06 December 2012 Pages: 1539 - 1544
Highly conducting and transparent Ga2O3 doped ZnO thin films prepared by thermal evaporation method Sowmya PalimarKasturi V. BangeraG. K. Shivakumar Fabrication, Treatment, and Testing of Materials and Structures 06 December 2012 Pages: 1545 - 1548