Abstract
A diode structure with a p-n junction and an InGaAs/GaAs quantum well in the space-charge region and a ferromagnetic GaMnSb layer as the p-type semiconductor has been fabricated and studied. The possibility of obtaining high-efficiency electroluminescence (EL) from the structure was demonstrated. It was found that the EL efficiency depends on the growth parameters of the ferromagnetic GaMnSb layer, i.e., the Mn content and layer thickness. The possible mechanisms of EL from the diodes under study were considered. Circularly polarized EL was obtained from the structures. It was shown that the degree of polarization (0.012 in a magnetic field of 0.37 T) remains nearly invariable in the temperature range 10–50 K and the circular polarization of the emitted light is due to the injection of spin-polarized holes into the quantum well from the ferromagnetic GaMnSb layer.
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Original Russian Text © M.V. Dorokhin, E.I. Malysheva, A.V. Zdoroveishev, Yu.A. Danilov, A.V. Kudrin, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 12, pp. 1554–1560.
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Dorokhin, M.V., Malysheva, E.I., Zdoroveishev, A.V. et al. GaMnSb/InGaAs/GaAs heterostructure leds with a ferromagnetic injector layer. Semiconductors 46, 1518–1523 (2012). https://doi.org/10.1134/S1063782612120056
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DOI: https://doi.org/10.1134/S1063782612120056