Quasi-reflectionless potentials in semiconductor nanoheterostructures A. A. GorbatsevichM. N. ZhuravlevV. V. Kapaev Basic Research 17 December 2008 Pages: 1455 - 1461
A study of the transport of charge carriers in coupled quantum regions B. G. KonoplevE. A. Ryndin Basic Research 17 December 2008 Pages: 1462 - 1468
Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method D. D. AvrovS. I. DorozhkinA. O. Lebedev Materials for Electronic Engineering 17 December 2008 Pages: 1469 - 1474
New technologies for production of polycrystalline silicon for solar power engineering B. G. GribovK. V. Zinov’ev Materials for Electronic Engineering 17 December 2008 Pages: 1475 - 1479
Photoluminescence of Si-doped GaAs epitaxial layers N. G. YaremenkoM. V. KarachevtsevaV. G. Mokerov Materials for Electronic Engineering 17 December 2008 Pages: 1480 - 1486
Phenomenological description of dispersion of 8-60-nm-thick silicon thin films into drops on Al2O3 inert surface A. A. BuzduganS. A. GavrilovI. S. Chulkov Materials for Electronic Engineering 17 December 2008 Pages: 1487 - 1491
Study of properties of nanoscale lead zirconate titanate films V. M. RoshchinV. B. YakovlevM. S. Lovyagina Materials for Electronic Engineering 17 December 2008 Pages: 1492 - 1495
Carbon nanomaterial studied by atomic-force and electron microscopies I. I. BobrinetskĭV. N. KukinM. M. Simunin Materials for Electronic Engineering 17 December 2008 Pages: 1496 - 1498
Effect of Te on the self-activated emission of ZnSe N. K. MorozovaD. A. Mideros Materials for Electronic Engineering 17 December 2008 Pages: 1499 - 1502
Charge state distribution in the a-Si:H mobility gap A. A. SherchenkovA. B. Apal’kov Materials for Electronic Engineering 17 December 2008 Pages: 1503 - 1507
Study of model of self-coordinated growth of single crystals of sapphire by horizontal directed crystallization S. P. MalyukovB. A. StefanovichD. I. Cherednichenko Materials for Electronic Engineering 17 December 2008 Pages: 1508 - 1511
Effect of treatment technology for the surface of multicomponent oxide compounds with sillenite structure on the electron-transition kinetics in surface areas A. N. ChaplyginE. A. SpirinA. S. Sizov Materials for Electronic Engineering 17 December 2008 Pages: 1512 - 1514
Charge state of luminescence centers in the Si-SiO2 structures subjected to sequential implantation with silicon and carbon ions A. P. BarabanYu. V. Petrov Microelectronics Technology 17 December 2008 Pages: 1515 - 1518
Local etching of silicon using a solid mask from porous aluminum oxide A. N. Belov Microelectronics Technology 17 December 2008 Pages: 1519 - 1521
Study of thermal effects and self-heating phenomena in planar power SOI MOS transistors Yu. A. ChaplyginE. A. ArtamonovaT. Yu. Krupkina Microelectronic Devices and Systems 17 December 2008 Pages: 1522 - 1526
Simulation and optimization of the CMOS structure with vertically integrated single-contact photodetectors with separation of colors in the visible spectral region E. B. VolodinE. A. Ignat’evaV. V. Uzdovskii Microelectronic Devices and Systems 17 December 2008 Pages: 1527 - 1531
Determination of the charge transport mechanism in p-n junctions by analyzing temperature dependences of forward current-voltage characteristics N. S. GrushkoA. V. LakalinA. I. Somov Microelectronic Devices and Systems 17 December 2008 Pages: 1532 - 1535
Magnetically controlled two-terminal device with negative differential resistance and N-type current-voltage characteristic Yu. A. ChaplyginA. I. GalushkovD. A. Usanov Microelectronic Devices and Systems 17 December 2008 Pages: 1536 - 1540
Intrinsic noise variation in an amplifier based on a heterojunction bipolar transistor amplifier in nonlinear mode A. M. BobreshovL. I. AverinaD. A. Makarenko Microelectronic Devices and Systems 17 December 2008 Pages: 1541 - 1544
NRZ-to-NRZM code converter based on gallium-arsenide heterojunction bipolar transistors V. P. TimoshenkovV. A. Bratov Microelectronic Devices and Systems 17 December 2008 Pages: 1545 - 1551
Texturing problems in nanotechnology: Texture control S. K. MaksimovK. S. Maksimov Nanotechnology 17 December 2008 Pages: 1552 - 1556
Analysis of the effect of material anisotropic properties on the eigenfrequency of ring cavities of micromechanical gyroscopes S. A. Zotov Microsystems 17 December 2008 Pages: 1557 - 1560
MOS structures with amorphous tungsten trioxide for capacitive humidity sensors E. A. Tutov Microsystems 17 December 2008 Pages: 1561 - 1563
Parameter estimation technique for sensitive elements of microaccelerometers and micromirrors S. P. TimoshenkovA. N. BoĭkoB. M. Simonov Microsystems 17 December 2008 Pages: 1564 - 1568
The use of the photorefractive effect for comprehensive three-dimensional local measurements of electrical and thermal parameters of silicon structures A. L. FilatovA. V. Lugovskoĭ Measurement Techniques 17 December 2008 Pages: 1569 - 1572
Application of inversion voltammetry to microimpurity content control in synthetic sapphire T. I. KhakhaninaA. A. Gurskaya Measurement Techniques 17 December 2008 Pages: 1573 - 1576