Study of the intermediate layer at the n +-CdS/p-CdTe interface S. A. MuzafarovaB. U. AitbaevZh. Zhanabergenov Atomic Structure and Nonelectronic Properties of Semiconductors 17 December 2008 Pages: 1377 - 1382
Energy spectrum of charge carriers in Ag2Te S. A. AliyevZ. F. AgayevR. I. Selimzadeh Electronic and Optical Properties of Semiconductors 17 December 2008 Pages: 1383 - 1387
Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects) N. A. PoklonskiS. A. VyrkoA. G. Zabrodskii Electronic and Optical Properties of Semiconductors 17 December 2008 Pages: 1388 - 1394
Subterahertz self-oscillations in ultrafast self-modulation of optical absorption in GaAs N. N. AgeevaI. L. BronevoiA. N. Krivonosov Electronic and Optical Properties of Semiconductors 17 December 2008 Pages: 1395 - 1402
Type II broken-gap GaSb1 − x Asx/InAs heterojunction (x < 0.15): Evolution of the band diagram for the ternary solid solution V. V. RomanovK. D. MoiseevYu. P. Yakovlev Semiconductor Structures, Interfaces, and Surfaces 17 December 2008 Pages: 1403 - 1407
Giant burst of impact ionization in a p-n junction of the 6H-SiC polytype V. I. SankinP. P. Shkrebiy Semiconductor Structures, Interfaces, and Surfaces 17 December 2008 Pages: 1408 - 1412
Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching M. PociaskI. I. IzhninV. I. Ivanov-Omskii Semiconductor Structures, Interfaces, and Surfaces 17 December 2008 Pages: 1413 - 1415
Surface states on the n-InN-electrolyte interface A. A. GutkinM. É. RudinskyS. Gwo Semiconductor Structures, Interfaces, and Surfaces 17 December 2008 Pages: 1416 - 1419
AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy V. N. JmerikA. M. MizerovG. P. Yablonskii Low-Dimensional Systems 17 December 2008 Pages: 1420 - 1426
The binding energy of excitons and X + and X − trions in one-dimensional systems M. A. SeminaR. A. SergeevR. A. Suris Low-Dimensional Systems 17 December 2008 Pages: 1427 - 1433
Radiation hardness of SiC subjected to alternating irradiation and annealing A. M. IvanovN. B. StrokanA. A. Lebedev Physics of Semiconductor Devices 17 December 2008 Pages: 1434 - 1439
An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures M. M. ZverevN. A. GamovP. S. Kop’ev Physics of Semiconductor Devices 17 December 2008 Pages: 1440 - 1444
Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces Yu. B. SamsonenkoG. É. CirlinV. G. Dubrovskii Fabrication, Treatment, and Testing of Materials and Structures 17 December 2008 Pages: 1445 - 1449
Growth of 4H-polytype silicon carbide ingots on (10\( \bar 1 \)0) seeds D. D. AvrovA. V. BulatovYu. M. Tairov Fabrication, Treatment, and Testing of Materials and Structures 17 December 2008 Pages: 1450 - 1453