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Growth of 4H-polytype silicon carbide ingots on (10\( \bar 1 \)0) seeds

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Abstract

The growth of 4 H-polytype silicon carbide ingots by the modified Lely method on (10\( \bar 1 \)0) seeds has been investigated. It is shown that this seed plane allows intense ingot outgrowth. Single-crystal ingots up to 60 mm in diameter can be obtained at growth rates below 0.6 mm/h. Investigation of the defect structure showed that the grown ingots are practically micropipe-free but contain stacking faults and carbon inclusions.

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Authors and Affiliations

  1. State Electrotechnical University, St. Petersburg, 197376, Russia

    D. D. Avrov, A. V. Bulatov, S. I. Dorozhkin, A. O. Lebedev & Yu. M. Tairov

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    D. D. Avrov, A. V. Bulatov, S. I. Dorozhkin, A. O. Lebedev & Yu. M. Tairov

Authors
  1. D. D. Avrov
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  2. A. V. Bulatov
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  3. S. I. Dorozhkin
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  4. A. O. Lebedev
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  5. Yu. M. Tairov
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Corresponding author

Correspondence to A. O. Lebedev.

Additional information

Original Russian Text © D.D. Avrov, A.V. Bulatov, S.I. Dorozhkin, A.O. Lebedev, Yu.M. Tairov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 12, pp. 1483–1487.

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Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I. et al. Growth of 4H-polytype silicon carbide ingots on (10\( \bar 1 \)0) seeds. Semiconductors 42, 1450–1453 (2008). https://doi.org/10.1134/S1063782608120142

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  • DOI: https://doi.org/10.1134/S1063782608120142

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