Influence of the electron-hole equilibrium shift on transition-metal diffusion in GaAs S. S. Khludkov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 869 - 874
The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation O. V. Aleksandrov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 875 - 880
Planar lateral crystallization of the cobalt-silicide phase on silicon surface I. V. BelousovG. V. KuznetsovO. P. Pchelyakov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 881 - 883
The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon A. V. SachenkoA. P. GorbanI. O. Sokolovsky Electronic and Optical Properties of Semiconductors Pages: 884 - 889
Effect of irradiation temperature on the efficiency of introduction of multivacancy defects into n-Si crystals T. A. Pagava Electronic and Optical Properties of Semiconductors Pages: 890 - 892
Stabilization of the fermi level by a resonant gallium level in Pb1−x SnxTe alloys E. P. SkipetrovE. A. ZverevaV. E. Slynko Electronic and Optical Properties of Semiconductors Pages: 893 - 897
Detection of singly ionized state of two-electron tin centers with negative correlation energy in Pb1-x SnxS alloys R. A. CastroS. A. NemovP. P. Seregin Electronic and Optical Properties of Semiconductors Pages: 898 - 900
Specific features of transmutational doping of 30Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance P. G. BaranovB. Ya. BerA. V. Gusev Electronic and Optical Properties of Semiconductors Pages: 901 - 910
Characteristics of the oxide-p-InSe heterojunctions exposed to irradiation with X-ray photons Z. D. KovalyukV. N. KaterynchukN. D. Raransky Semiconductor Structures, Interfaces, and Surfaces Pages: 911 - 914
Effect of fast annealing on the electrical properties of SiO2/Si structures with thin layers of anodic silicon oxide I. L. BaranovL. V. TabulinaT. G. Rusalskaya Semiconductor Structures, Interfaces, and Surfaces Pages: 915 - 919
Tunneling and impact ionization in thin-film ZnS:Mn-based electroluminescent structures N. T. GurinA. M. Afanas’evD. V. Ryabov Semiconductor Structures, Interfaces, and Surfaces Pages: 920 - 933
Contributions of the interior and surface states of charge carriers to the emission spectra of CdS quantum dots in borosilicate glasses N. V. BondarM. S. BrodynG. M. Tel’biz Low-Dimensional Systems Pages: 934 - 940
Excitonic photoluminescence of silicon quantum-well structures A. V. SachenkoD. V. KorbutyakI. M. Kupchak Low-Dimensional Systems Pages: 941 - 948
Electric-field-controlled effects of spatial recurrence and multiplication of electron waves in two-dimensional semiconductor nanostructures V. A. PetrovA. V. Nikitin Low-Dimensional Systems Pages: 949 - 958
Low-temperature materials and thin-film transistors for electronics on flexible substrates A. SazonovM. MeitineA. Nathan Physics of Semiconductor Devices Pages: 959 - 967
Specific features of anisotropic optical thermoelements A. A. AshcheulovI. V. Gutsul Physics of Semiconductor Devices Pages: 968 - 976
InAs flip-chip LEDs with InGaAsSb buffer layers N. V. ZotovaN. D. Il’inskayaN. G. Tarakanova Physics of Semiconductor Devices Pages: 977 - 981
Kelvin probe force microscopy of hole leakage from the active region of a working injection-type semiconductor laser diode A. V. AnkudinovV. P. EvtikhievR. Laiho Physics of Semiconductor Devices Pages: 982 - 989
Finite time of carrier energy relaxation as a cause of optical-power limitation in semiconductor lasers S. O. SlipchenkoZ. N. SokolovaI. S. Tarasov Physics of Semiconductor Devices Pages: 990 - 995
